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SI4108DY-T1-E3-VB Product details

Product introduction:

**Product Introduction:**
SI4108DY-T1-E3 is a single N-channel MOSFET in SOP8 package with low on-resistance and high efficiency, especially suitable for switching applications requiring high efficiency and high current. This MOSFET has a maximum drain-source voltage (VDS) of 60V and can withstand a gate-source voltage (VGS) of ±20V, which is suitable for a wide voltage operating range. Its on-resistance is only 5mΩ at VGS=10V and 6mΩ at VGS=4.5V, ensuring efficient energy transfer and low loss. It is suitable for many fields such as power management, DC-DC converters, motor drives and automotive electronics.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Single-N 60V 3V 16A 5mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Single-N 60V 3V 16A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Single-N 60V 3V 16A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Single-N
**Detailed parameter description: **
- **Model**: SI4108DY-T1-E3
- **Package**: SOP8
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 16A
- **Technology**: Trench technology

Domain and module applications:

**Applicable fields and modules:**

1. **Power management and DC-DC converter**:
SI4108DY-T1-E3's low on-resistance and high current carrying capacity make it an ideal choice for efficient power management systems. It can be used as a switching element in DC-DC converters to reduce energy loss and improve overall efficiency. With an operating voltage of up to 60V, it is suitable for high-efficiency power modules with voltage levels such as 12V, 24V, and 48V.

2. **Motor drive**:
In motor control systems, SI4108DY-T1-E3 can be used as a switching element to drive the motor. Due to its low RDS(ON), it can reduce heat generation during fast switching and improve the working efficiency of the motor. In addition, this MOSFET can withstand large currents and high voltages, suitable for high-performance requirements of motor drives.

3. **Automotive electronics**:
This MOSFET is suitable for power management systems in automobiles, especially battery management and charging systems for electric or hybrid vehicles. It can operate efficiently in automotive high-voltage systems, ensuring more precise voltage and current control during battery charging and discharging, and reducing power losses.

4. **Switching Power Supply (SMPS)**:
In a switching power supply (SMPS), the low on-resistance of the SI4108DY-T1-E3 makes it an ideal switching element. It can provide stable performance in high-frequency switching mode and is suitable for various power conversion and regulation applications, such as PC power supply, LED drive and industrial power supply.

5. **Battery Management and Energy Storage System**:
Due to its excellent switching efficiency and high current carrying capacity, the SI4108DY-T1-E3 can also be used as a power switching element in a battery management system (BMS). It plays a key role in the battery charging and discharging process, helping to ensure efficient and safe battery management.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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