Product introduction:
1. **Product Introduction: SI4100DY-T1-E3-VB MOSFET**
SI4100DY-T1-E3-VB is a single N-channel field effect transistor (MOSFET) in SOP8 package. The device supports a maximum gate-source voltage (VGS) of ±20V and has a low on-resistance (RDS(ON)) of 33mΩ at VGS=4.5V and 32mΩ at VGS=10V. Its threshold voltage (Vth) is 1.8V, the maximum drain-source voltage (VDS) is 100V, and it has a high current carrying capacity (ID is up to 9A). This MOSFET uses Trench technology, which can provide lower conduction losses, higher switching speeds, and better thermal performance, making it very suitable for efficient power switching applications.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-N |
100V |
|
1.8V |
9A |
|
|
32mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-N |
100V |
|
1.8V |
9A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-N |
100V |
|
1.8V |
9A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-N |
|
|
|
|
|
|
|
2. **Detailed parameter description:**
- **Model**: SI4100DY-T1-E3-VB
- **Package**: SOP8
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 33mΩ (VGS = 4.5V)
- 32mΩ (VGS = 10V)
- **Maximum leakage current (ID)**: 9A
- **Technology type**: Trench technology
- **Application areas**: Low-power switch, signal amplification, DC-DC converter, switching power supply, load switch
Domain and module applications:
3. **Application Examples:**
SI4100DY-T1-E3-VB MOSFET is suitable for many fields, especially in low-power switching applications that require high efficiency and high reliability.
- **Power Management**: The low RDS(ON) value of this MOSFET makes it an excellent performer in DC-DC converters, which can effectively reduce energy loss and improve conversion efficiency. It is particularly suitable for voltage conversion in 5V, 12V and 24V systems.
- **Load Switch**: With its maximum leakage current capability of 9A, SI4100DY-T1-E3-VB is very suitable for various load switch applications, such as battery management systems (BMS), small appliance power switches, etc., and can provide reliable switching performance to ensure safe operation of the system.
- **Power Tools**: In the power module of power tools, this MOSFET can handle higher currents, and due to its high efficiency and low power consumption, it can extend the tool's service life and improve overall performance.
- **Automotive electronics**: In automotive applications, especially in the power systems of electric vehicles (EVs) and hybrid electric vehicles (HEVs), the SI4100DY-T1-E3-VB can be used for power management, switch control, and load switching to meet the vehicle's stringent requirements for power and durability.
- **Communication equipment**: This MOSFET can be used in high-efficiency switching applications such as power modules and signal amplification circuits in communication base stations, supporting communication equipment to continue to operate stably under long-term, high-load working conditions.
The MOSFET's low on-resistance, high current carrying capacity, and ability to adapt to a wide voltage range enable it to provide stable performance in these different application scenarios and excel in environments with high efficiency requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours