Product introduction：
**SI2356DS-VB Product Introduction**
SI2356DS-VB is a single N-type MOSFET in a SOT23-3 package, designed for low-voltage, high-efficiency switching power management applications. Its maximum drain voltage (V_DS) is 30V and its maximum gate-source voltage (V_GS) is ±20V. This model has excellent conduction performance, with a low on-resistance (R_DS(on)) of 33mΩ (V_GS = 4.5V) and 30mΩ (V_GS = 10V), and is suitable for use in power management, battery protection, and load switching, which require high efficiency and low power consumption. The SI2356DS-VB has a maximum drain current of 6.5A, which is suitable for miniaturized, high-efficiency power switching applications such as portable electronic devices, automotive electronics, LED drivers, and other high-efficiency power modules.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N |
30V |
20（±V） |
1.7V |
6.5A |
|
|
30mΩ |
|
**SI2356DS-VB detailed parameter description**
- **Package:** SOT23-3
- **Configuration:** Single N-type MOSFET (Single-N-Channel)
- **V_DS (drain-source voltage):** 30V
- **V_GS (gate-source voltage):** ±20V
- **V_th (gate threshold voltage):** 1.7V
- **R_DS(ON) (on-resistance):**
- 33mΩ @ V_GS = 4.5V
- 30mΩ @ V_GS = 10V
- **ID (maximum drain current):** 6.5A
- **Technology:** Trench (trench technology)
**Electrical characteristics:**
- **Low on-resistance:** This MOSFET has a low on-resistance at V_GS = 4.5V and V_GS = 10V The on-resistance under the condition of 100V and 200V is 33mΩ and 30mΩ respectively, showing excellent switching performance and low power consumption characteristics.
- **High-efficiency switch:** Adopting Trench technology, it has excellent switching characteristics and low heat generation, suitable for high-frequency switching power supplies.
- **High current capability:** The maximum drain current can reach 6.5A, suitable for a variety of low-voltage and high-load applications.
- **Wide voltage range:** The maximum gate-source voltage is ±20V, ensuring the stability and reliability of the circuit.
Domain and module applications：
**Applicable fields and modules**
1. **Power management module:**
SI2356DS-VB's low R_DS(on) and high current carrying capacity make it very suitable for power management applications, especially in low-voltage and high-efficiency DC-DC converters and battery management systems. In these power modules, MOSFET can be used as a switching element to provide efficient current control and voltage conversion. For example, in mobile devices, power tools and other products, MOSFET can efficiently convert battery voltage into a stable output voltage to provide continuous power support.
2. **Load switch application:**
Due to its low on-resistance, SI2356DS-VB is very suitable for load switch modules. In smart homes, portable electronic devices, etc., MOSFET can be used as a load switch element to control the start and stop of the device. For example, in battery-powered smart home devices, this MOSFET can be used to control the switching of the power supply to extend the battery life.
3. **Battery Management System (BMS): **
In the battery management system, SI2356DS-VB is used for key functions such as battery protection, charge and discharge control. Its low R_DS(on) characteristics and large drain current carrying capacity make it suitable for efficient current control modules in battery management, helping to manage the battery charging process, prevent overcharging and over-discharging, and improve overall energy efficiency. For example, in lithium battery management systems, MOSFET controls the battery charging and discharging process to ensure safe use of the battery and increase the battery life.
4. **Automotive Electronics: **
In automotive electronics, SI2356DS-VB can be used in modules such as vehicle battery management, LED driving and power conversion. It can be used as a power switch to manage the battery charging and discharging process in electric vehicles (EV) and hybrid electric vehicles (HEV), and can also efficiently control the power supply of vehicle lighting systems and vehicle electronic equipment. For example, MOSFET can be used for current control of vehicle batteries to ensure that the battery is charged and discharged within a safe operating voltage range.
5. **LED driver: **
SI2356DS-VB is also suitable for LED driver circuits, especially in applications that require efficient power conversion and precise current control. Due to its low on-resistance and high efficiency, it can be used as a switching element in LED driver power supplies to ensure stable output current and efficient energy utilization. For example, in smart lighting systems, MOSFETs can be used to drive multiple LED lamps while controlling the current of each lamp to improve the overall lighting effect.
6. **Consumer electronics: **
In the field of consumer electronics, SI2356DS-VB is widely used in power management systems for products such as smartphones, tablets, and digital cameras. MOSFETs can provide efficient voltage conversion, help devices achieve low power operation, and support high-frequency switching operations to improve the efficiency of equipment use.
This MOSFET is suitable for various low-voltage power management, load switching, and battery protection applications. Its small package, low on-resistance, and high current capability make it an indispensable component in a variety of consumer electronics and industrial equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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