Product introduction：
Product Introduction:
**SI2351DS-T1-VB** is a unipolar P-type MOSFET based on Trench technology, using a compact SOT23-3 package, designed for low voltage and small volume applications. This MOSFET provides efficient switching performance, with a maximum drain-source voltage of -20V and a maximum drain current of -4A, suitable for a variety of low-power electronic devices. The low on-resistance and stable electrical performance of SI2351DS-T1-VB make it very useful in power management, load switching, overvoltage protection and other fields, especially suitable for applications in portable devices and consumer electronics.
File download
Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P |
-20V |
12（±V） |
-0.8V |
-4A |
80mΩ |
|
60mΩ |
|
Detailed parameter description:
- **Package type**: SOT23-3
- **Configuration**: Unipolar P-type MOSFET
- **Maximum drain-source voltage (VDS)**: -20V
- **Maximum gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: -0.8V
- **On-resistance (RDS(ON))**:
- 80mΩ @ VGS = 2.5V
- 65mΩ @ VGS = 4.5V
- 60mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -4A
- **Technology**: Trench technology
Domain and module applications：
Typical Application Areas and Modules:
1. **Battery Management System (BMS)**:
SI2351DS-T1-VB is ideal for battery management systems in portable devices. In this application, MOSFET is used for efficient power switching, charge management, and overvoltage protection. Due to its low on-resistance, it can help reduce energy loss during battery charging and discharging, improve battery efficiency, and ensure safe operation of the device.
2. **Load Switch**:
This MOSFET is widely used in load switching circuits due to its efficient switching characteristics. SI2351DS-T1-VB can act as a switch between the load and the power supply, control the current flow of the device, and effectively prevent unnecessary power loss. It is widely used in mobile devices, communication equipment, and other embedded systems to ensure that the circuit can operate efficiently and stably.
3. **Overvoltage Protection Circuit**:
In the power protection circuit, SI2351DS-T1-VB can be used for overvoltage protection to prevent damage to the circuit when the current is too high or the voltage fluctuates. Its P-type configuration is very suitable for this application, and it can quickly disconnect the circuit when the voltage is abnormal, protecting other sensitive components from damage. This feature makes it very suitable for use in power adapters, chargers, and power management modules.
4. **DC-DC Converter**:
Due to the low on-resistance and compact package of SI2351DS-T1-VB, it is ideal as a switching element in DC-DC converters. It can reduce losses in efficient voltage conversion and improve overall energy efficiency. Especially in portable electronic devices and low-power power modules, SI2351DS-T1-VB can be used to reduce power loss and improve power conversion efficiency.
5. **Portable Electronic Products**:
SI2351DS-T1-VB is widely used in various portable electronic products, such as smartphones, tablets, wearable devices, etc. due to its small size and efficient electrical performance. It can effectively manage power and ensure the stability and endurance of the device during long-term operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page
