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SI2347DS-VB Product details

Product introduction:

SI2347DS-VB MOSFET Product Introduction

SI2347DS-VB is a single P-channel MOSFET in SOT23-3 package, suitable for a variety of low voltage, high-efficiency switching applications. Its maximum drain-source voltage V_DS is -30V, and the maximum gate-source voltage V_GS is ±20V, which is suitable for negative power supply circuits or negative voltage control systems. The threshold voltage (V_th) of SI2347DS-VB is -1.7V, and the on-resistance (R_DS(ON)) is 54mΩ at V_GS = 4.5V and 46mΩ at V_GS = 10V. It has low power loss and high current carrying capacity, and the maximum drain current (I_D) is -5.6A. Using Trench technology, this MOSFET has the characteristics of high efficiency and low power consumption, and can provide stable switching control at lower voltages, which is suitable for high-efficiency power conversion and load switching applications.

It is widely used in low voltage power management, load switching, LED driving and other fields, especially suitable for occasions with strict requirements on switching efficiency and power loss. The low on-resistance characteristics of this MOSFET make it an ideal choice for high-efficiency power supplies and electric drive systems in modern electronic devices.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-P -30V 20(±V) -1.7V -5.6A 46mΩ
SI2347DS-VB MOSFET Detailed Parameter Description

- **Model**: SI2347DS-VB
- **Package Type**: SOT23-3
- **Configuration**: Single P-channel
- **Maximum Drain-Source Voltage (V_DS)**: -30V
- **Maximum Gate-Source Voltage (V_GS)**: ±20V
- **Threshold Voltage (V_th)**: -1.7V
- **On-Resistance (R_DS(ON))**:
- At V_GS = 4.5V, R_DS(ON) = 54mΩ
- At V_GS = 10V, R_DS(ON) = 46mΩ
- **Maximum Drain Current (I_D)**: -5.6A
- **Technology**: Trench
- **Operating Temperature Range**: -55°C to +150°C
- **Package Type**: SOT23-3

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Domain and module applications:

SI2347DS-VB MOSFET Applications and Modules

1. **Power Management**
SI2347DS-VB can be widely used in low-voltage power management systems, especially in negative voltage control systems, such as negative power converters, inverters, etc. Due to its low on-resistance characteristics, this MOSFET can improve power conversion efficiency, reduce power loss, and enable the system to work stably and efficiently at low voltages.

2. **Load Switch**
In load switch applications, SI2347DS-VB, as a switching element, can achieve precise load control, especially suitable for switch control circuits that require high efficiency and low power consumption. For example, in battery management systems, portable devices, power switch circuits, etc., SI2347DS-VB can effectively manage the connection and disconnection of power to ensure efficient and stable operation of the system.

3. **LED Drive**
SI2347DS-VB's low R_DS(ON) characteristics make it very suitable for LED drive circuits. In LED drive systems, MOSFET plays the role of current control, especially when low power loss and high efficiency are required. It can effectively reduce heat generation, improve overall system performance, and extend the service life of LEDs.

4. **Electric drive systems**
SI2347DS-VB can also be used in electric drive systems, especially for power management and switch control of low-power electric tools, electric toys, electric equipment, etc. Due to its high current carrying capacity and low on-resistance, this MOSFET can provide efficient current management and support the smooth operation of electric drive systems.

5. **Consumer electronics**
In various consumer electronics products, such as smartphones, tablets, portable speakers, etc., SI2347DS-VB can be used in power management modules. It can be used as a switching element for load switches or power converters to help improve the efficiency of battery management systems and extend the battery life of devices.

6. **Automotive Electronic Systems**
In automotive electronic applications, SI2347DS-VB can be used as a power switch or load control switch, especially in systems that require negative power control, such as automotive battery management, electric seat adjustment systems, etc. Its high performance and high reliability make it one of the ideal components in automotive electrical systems.

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SI2347DS-VB MOSFET has excellent switching performance and low power consumption characteristics, suitable for a wide range of applications, including power management, LED driving, electric drive systems, etc. Its high efficiency and reliable performance make it an indispensable component in modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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