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SI2323DS-T1-VB Product details
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**SI2323DS-T1-VB** is a single P-channel MOSFET in SOT23-3 package. The device has a maximum drain-source voltage (V_DS) of -30V, a low threshold voltage (V_th) of -1.7V, and an R_DS(ON) of 54mΩ at V_GS = 4.5V and 46mΩ at V_GS = 10V. Its maximum drain current (I_D) is -5.6A, and it uses Trench technology, which has lower on-resistance and higher efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | -30V | -1.7V | -5.6A | 46mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | -30V | -1.7V | -5.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | -30V | -1.7V | -5.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P |
Product parameters:
- **Package: ** SOT23-3
- **Configuration: ** Single P channel
- **V_DS: ** -30V
- **V_GS: ** ±20V
- **V_th: ** -1.7V
- **R_DS(ON): ** 54mΩ at V_GS = 4.5V, 46mΩ at V_GS = 10V
- **I_D (max): ** -5.6A
- **Technology: ** Trench technology
- **Package: ** SOT23-3
- **Configuration: ** Single P channel
- **V_DS: ** -30V
- **V_GS: ** ±20V
- **V_th: ** -1.7V
- **R_DS(ON): ** 54mΩ at V_GS = 4.5V, 46mΩ at V_GS = 10V
- **I_D (max): ** -5.6A
- **Technology: ** Trench technology
Domain and module applications：
Application areas:
This MOSFET is suitable for various electronic circuits with low voltage and high efficiency. Due to its low R_DS(ON), it performs well in power conversion and power management, especially for portable devices, DC-DC converters and battery-powered devices. For example, in applications such as power tools or electric toys, it can effectively improve energy efficiency and extend battery life. Its compact SOT23-3 package makes it also play an important role in space-constrained designs, such as smartphones, tablets and other portable consumer electronics.
In addition, as a single P-channel MOSFET, it is very suitable for reverse current control and load switching circuits, and can be widely used in power management systems that require high efficiency, such as LED drivers, battery management systems (BMS) and overcurrent protection circuits. In automotive electronics, it is also suitable for low-voltage, high-efficiency power distribution systems.
This MOSFET is suitable for various electronic circuits with low voltage and high efficiency. Due to its low R_DS(ON), it performs well in power conversion and power management, especially for portable devices, DC-DC converters and battery-powered devices. For example, in applications such as power tools or electric toys, it can effectively improve energy efficiency and extend battery life. Its compact SOT23-3 package makes it also play an important role in space-constrained designs, such as smartphones, tablets and other portable consumer electronics.
In addition, as a single P-channel MOSFET, it is very suitable for reverse current control and load switching circuits, and can be widely used in power management systems that require high efficiency, such as LED drivers, battery management systems (BMS) and overcurrent protection circuits. In automotive electronics, it is also suitable for low-voltage, high-efficiency power distribution systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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