Product introduction：
**SI2308BDS-VB Product Introduction**
SI2308BDS-VB is a single N-type MOSFET in a SOT23-3 package with high performance and low on-resistance, making it ideal for medium and low voltage power management and switching applications. This model has a maximum drain voltage (V_DS) of 60V and a maximum gate-source voltage (V_GS) of ±20V, making it suitable for a variety of low-power electronic devices. Its low on-resistance (R_DS(on)) enables it to perform well in high-efficiency power supplies and switching circuits, effectively reducing energy loss and improving system efficiency. This MOSFET maintains stable performance at a maximum drain current of 4A and is widely used in portable devices, battery management systems, power switches, and communication modules.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N |
60V |
20（±V） |
1.7V |
4A |
|
|
75mΩ |
|
**SI2308BDS-VB detailed parameter description**
- **Package:** SOT23-3
- **Configuration:** Single N-type MOSFET (Single-N-Channel)
- **V_DS (drain-source voltage):** 60V
- **V_GS (gate-source voltage):** ±20V
- **V_th (gate threshold voltage):** 1.7V
- **R_DS(ON) (on-resistance):**
- 86mΩ @ V_GS = 4.5V
- 75mΩ @ V_GS = 10V
- **ID (maximum drain current):** 4A
- **Technology:** Trench (trench technology)
**Electrical characteristics:**
- **Low on-resistance:** R_DS(on) at 4.5V and 10V 86mΩ and 75mΩ at gate voltage, respectively, suitable for high-performance applications, can reduce current loss and reduce heat generation.
- **Efficient switching performance:** The Trench technology of this MOSFET enables a high switching frequency, suitable for fast switching applications.
- **High reliability:** Supports higher gate-source voltage (±20V), enhancing the reliability and anti-interference ability of the circuit.
- **Low leakage current:** Provides low leakage current, improving the overall performance and stability of low-power devices.
Domain and module applications：
**Application fields and modules**
1. **Power management module:**
SI2308BDS-VB's low on-resistance and efficient switching performance make it very suitable for use in power management modules. Especially in low-voltage DC-DC converters, battery chargers and other power modules, this MOSFET can effectively reduce energy loss and improve efficiency. For example, in portable devices, DC-DC converters use this MOSFET to convert battery voltage more efficiently and extend the use time of the device.
2. **Load switch application:**
This MOSFET is suitable for load switching circuits. Due to its low on-resistance, it can provide less heat loss and higher efficiency in switching operations, and is widely used in USB power switches, battery-powered portable devices and other occasions. In these applications, SI2308BDS-VB acts as a switching element to control the load, and the switching function is realized by adjusting the gate voltage.
3. **Battery Management System (BMS): **
In battery management systems, SI2308BDS-VB can be used for battery charge and discharge control. Its excellent conduction performance and high load capacity make it play an important role in battery protection circuits. For example, in lithium battery management, MOSFET is used to control the switch of battery charge and discharge to ensure that the battery operates within a safe range and prevent overcharge and overdischarge.
4. **Communication Equipment: **
In low-power wireless communication equipment, SI2308BDS-VB can be used for signal switching and power switching circuits. Its low on-resistance can reduce power consumption in communication equipment, and its compact SOT23-3 package is also very suitable for space-constrained device applications. It is widely used in communication modules such as Wi-Fi modules and Bluetooth devices to help these devices achieve efficient power management.
5. **Consumer Electronics: **
This MOSFET is widely used in various consumer electronic products, especially in smart phones, tablets, digital cameras and other devices. It is used in power management circuits to efficiently handle battery voltage conversion, improve the overall performance of the device and extend its usage time. For example, in the battery charging management of mobile phones, SI2308BDS-VB is responsible for controlling the current flow to the battery and optimizing the battery charging process.
6. **Automotive Electronics:**
In automotive electronic systems, SI2308BDS-VB is suitable for applications such as battery management and power switching. For example, in the battery management system (BMS) of electric vehicles, this MOSFET can be used to control charging modules, battery monitoring systems, and other battery-related functional modules. The low on-resistance characteristics help reduce heat loss and ensure the efficiency and stability of the battery system.
This MOSFET provides excellent switching performance, low power consumption and high efficiency in multiple fields, and is suitable for various electronic systems that require high efficiency and small size packaging, especially in portable and low-power devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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