Product introduction：
SI2306DS-T1-VB MOSFET Product Introduction
SI2306DS-T1-VB is a single N-channel MOSFET in SOT23-3 package, suitable for a variety of low-voltage, high-efficiency switching applications. This MOSFET has a maximum drain-source voltage V_DS of 30V, suitable for battery-powered, power management, electric drive systems and other scenarios. Its threshold voltage (V_th) is 1.7V, and the on-resistance (R_DS(ON)) is 33mΩ at V_GS = 4.5V and 30mΩ at V_GS = 10V, providing low power loss and high efficiency. The maximum drain current (I_D) of SI2306DS-T1-VB is 6.5A, which is suitable for most low-power drive and switching circuits.
It uses Trench technology, can provide higher current carrying capacity at lower voltage, and has excellent thermal management performance, suitable for use in a wide range of electronic devices, including power adapters, LED drivers, load switches and other applications.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N |
30V |
20（±V） |
1.7V |
6.5A |
|
|
30mΩ |
|
SI2306DS-T1-VB MOSFET Detailed Parameters
- **Model**: SI2306DS-T1-VB
- **Package Type**: SOT23-3
- **Configuration**: Single N-channel
- **Maximum Drain-Source Voltage (V_DS)**: 30V
- **Maximum Gate-Source Voltage (V_GS)**: ±20V
- **Threshold Voltage (V_th)**: 1.7V
- **On-Resistance (R_DS(ON))**:
- At V_GS = 4.5V, R_DS(ON) = 33mΩ
- At V_GS = 10V, R_DS(ON) = 30mΩ
- **Maximum Drain Current (I_D)**: 6.5A
- **Technology**: Trench
- **Operating temperature range**: -55°C to +150°C
- **Package type**: SOT23-3
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Domain and module applications：
SI2306DS-T1-VB MOSFET Applications and Modules
1. **Power Management**
SI2306DS-T1-VB can be widely used in power management modules, especially in DC-DC converters, buck and boost converters. Its low on-resistance and efficient switching characteristics can significantly improve power conversion efficiency and reduce power loss. This MOSFET is suitable for battery-powered systems, portable electronic devices and various low-power power management applications.
2. **LED Drive**
Due to its low R_DS(ON) and good switching performance, SI2306DS-T1-VB is also suitable for LED drive circuits. In LED lighting systems that require efficient power control and temperature rise management, SI2306DS-T1-VB can work stably, provide reliable current control, and extend the service life of LEDs.
3. **Load Switch**
This MOSFET is suitable for load switch applications, especially in situations where low power consumption and high reliability are required. For example, in the power switch circuits of battery management systems, portable devices, and various electronic devices, SI2306DS-T1-VB can be used as an efficient and reliable switching element to ensure long-term stable operation of the system.
4. **Electric drive system**
In electric drive systems, especially low-power electric tools, electric toys, electric equipment, etc., SI2306DS-T1-VB can be used as a switching element to control the drive current of the motor or as a switch for the power module. Its high current carrying capacity and low on-resistance enable the system to operate efficiently at low voltages, improving the overall efficiency of the system.
5. **Consumer electronics**
In the power circuits of consumer electronics (such as smartphones, tablets, portable audio, etc.), SI2306DS-T1-VB can be used as a switching control element to optimize power management and provide stable voltage conversion. Such electronic products usually require efficient battery management and low power consumption characteristics, and SI2306DS-T1-VB provides an ideal solution.
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SI2306DS-T1-VB is an N-Channel MOSFET that is very suitable for low voltage, high efficiency switching applications. With its excellent performance and wide applicability, it can be used in power management, electric drive, load switching and other applications in multiple fields, providing efficient and stable switching control for modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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