Product introduction：
Product Introduction
SI1965DH-T1-GE3-VB is a MOSFET with a dual P+P structure, packaged in SC70-6, designed for low voltage applications. This type of MOSFET uses Trench technology and has a low RDS(ON) value, suitable for applications such as power management, switching power supplies, and drive circuits. This device can provide excellent switching performance at an operating voltage of -20V VDS. Through optimized current control characteristics, it can effectively improve efficiency and reduce heat dissipation. It is suitable for high-performance and low-power electronic devices, and is widely used in mobile devices, communication equipment, and consumer electronics.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SC70-6 |
Dual-P+P |
-20V |
|
-0.6V |
-1.8A |
235mΩ |
|
|
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SC70-6 |
Dual-P+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SC70-6 |
Dual-P+P |
-20V |
|
-0.6V |
-1.8A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SC70-6 |
Dual-P+P |
-20V |
|
-0.6V |
-1.8A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SC70-6 |
Dual-P+P |
|
|
|
|
|
|
|
Detailed parameter description
- **Model**: SI1965DH-T1-GE3-VB
- **Package type**: SC70-6
- **Configuration**: Dual P+P type Channel
- **VDS (drain-source voltage)**: -20V
- **VGS (gate-source voltage)**: ±12V
- **Vth (threshold voltage)**: -0.6V
- **RDS(ON)**:
- 235mΩ @ VGS=2.5V
- 155mΩ @ VGS=4.5V
- **ID (maximum drain current)**: -1.8A
- **Technology**: Trench (trench technology)
Domain and module applications：
Applications and module examples
1. **Mobile device power management**
SI1965DH-T1-GE3-VB can work efficiently in mobile devices as a core component of the power management module. Its low RDS(ON) characteristics make it very suitable for battery-powered devices, providing long-term stable operation, extending battery life, and reducing power consumption. It is especially suitable for efficient power conversion in mobile terminals such as mobile phones and tablets.
2. **Switching power supply (SMPS)**
In the design of switching power supplies, especially in high-efficiency, low-power DC-DC converters, SI1965DH-T1-GE3-VB MOSFET can significantly reduce conduction losses and improve power conversion efficiency through its low RDS(ON) value. This makes the device widely used in modules such as notebook power adapters and LED driver power supplies.
3. **Consumer electronics devices**
As a dual P+P type MOSFET, SI1965DH-T1-GE3-VB can be used in power management systems of various consumer electronic devices. For example, in smart home appliances such as TVs, stereos, and game consoles, it can provide stable power switching performance to ensure the reliability and high efficiency of the equipment.
4. **Motor drive and control system**
In motor drive systems, the low on-resistance characteristics of SI1965DH-T1-GE3-VB make it very suitable for driving motors with large currents, such as fans, pumps, and other home appliance motor drive modules. Its efficient switching performance can effectively reduce heat loss and optimize motor operating efficiency.
5. **Automotive electronics**
This MOSFET also has important applications in automotive power management and low-voltage battery management systems. For example, as a key component for battery monitoring and voltage conversion in automotive control modules, it can provide precise current control in low-voltage environments to ensure stable operation of batteries and electrical systems.
In general, SI1965DH-T1-GE3-VB is an efficient, low-power, and reliable dual P+P-type MOSFET suitable for various electronic devices, especially in applications that require low voltage, high efficiency, and low conduction loss.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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