Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SC70-6 |
Dual-P+P |
-20V |
|
-0.6V |
-1.8A |
235mΩ |
|
|
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SC70-6 |
Dual-P+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SC70-6 |
Dual-P+P |
-20V |
|
-0.6V |
-1.8A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SC70-6 |
Dual-P+P |
-20V |
|
-0.6V |
-1.8A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SC70-6 |
Dual-P+P |
|
|
|
|
|
|
|
2. Detailed parameter description:
- **Model**: SI1913EDH-T1-GE3
- **Package type**: SC70-6
- **Configuration**: Dual P+P type MOSFET
- **Drain to source voltage (VDS)**: -20V (max)
- **Gate to source voltage (VGS)**: ±12V (max)
- **Throughput voltage (Vth)**: -0.6V
- **On-resistance (RDS(ON))**:
- 235mΩ @ VGS = 2.5V
- 155mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: -1.8A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to 150°C (typical)
- **Number of Pins**: 6 pins
Domain and module applications:
3. Application fields and module examples:
#### Low-power portable devices:
Due to its low RDS(ON) and good switching performance, SI1913EDH-T1-GE3 is very suitable for power management modules of low-power portable devices such as mobile devices, smartphones, and tablets. It can efficiently control the flow of current in the battery management circuits of these devices, reduce energy loss, and thus extend the use time of the device.
#### Battery-powered systems:
The low on-resistance of this MOSFET makes it have low power loss in battery-powered systems, making it very suitable for use in battery charging circuits and battery protection circuits. It can ensure efficiency when charging the battery and provide protection when the battery voltage is too low or too high.
#### LED drive circuit:
In LED drive applications, SI1913EDH-T1-GE3 can be used as an efficient switching element for lighting systems with low-voltage power supply. Due to its low on-resistance and high switching frequency, it can effectively control the current flowing through the LED, improve system efficiency and extend the service life of the LED.
#### Load switch circuit:
This MOSFET can be widely used in low-voltage controlled load switch circuits, and is particularly suitable for applications that require fast switching and low power loss. For example, in power management modules in consumer electronics, power switch circuits in computer hardware and other fields, SI1913EDH-T1-GE3 can provide stable and efficient power switching functions.
#### Protection circuit:
SI1913EDH-T1-GE3 can also be used as a circuit protection component in overcurrent protection, overvoltage protection and other modules. It can quickly cut off the current when the current is too large or the voltage exceeds the standard, protecting the subsequent circuit from damage, and is particularly suitable for some sensitive devices that require high power stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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