Product introduction：
SI1903DL-T1-GE3-VB MOSFET Product Introduction
SI1903DL-T1-GE3 is a dual-channel MOSFET in SC70-6 package, configured as dual P+P-channel type. Its operating voltage is -20V, suitable for negative voltage driven circuits. This MOSFET features low R_DS(ON), R_DS(ON) is 155mΩ at V_GS = 4.5V, and can provide efficient power conversion. Its maximum drain current (ID) is -1.8A, suitable for low current and low voltage applications. It uses Trench technology and has low on-resistance, low power consumption and high efficiency. This MOSFET is widely used in battery management, power management, load switching and other fields, especially suitable for applications requiring efficient power conversion and low power consumption.
---
File download
Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SC70-6 |
Dual-P+P |
-20V |
|
-0.6V |
-1.8A |
235mΩ |
|
|
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SC70-6 |
Dual-P+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SC70-6 |
Dual-P+P |
-20V |
|
-0.6V |
-1.8A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SC70-6 |
Dual-P+P |
-20V |
|
-0.6V |
-1.8A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SC70-6 |
Dual-P+P |
|
|
|
|
|
|
|
SI1903DL-T1-GE3-VB MOSFET Detailed parameter description
- **Model**: SI1903DL-T1-GE3-VB
- **Package**: SC70-6
- **Configuration**: Dual P+P-channel
- **Maximum drain-source voltage (V_DS)**: -20V
- **Maximum gate-source voltage (V_GS)**: ±12V
- **Threshold voltage (V_th)**: -0.6V
- **On-resistance (R_DS(ON))**:
- At V_GS = 2.5V, R_DS(ON) = 235mΩ
- At V_GS = 4.5V, R_DS(ON) = 155mΩ
- **Maximum drain current (I_D)**: -1.8A
- **Technology**: Trench
- **Operating temperature range**: -55°C to +150°C
- **Package type**: SC70-6
---
Domain and module applications：
SI1903DL-T1-GE3-VB MOSFET Applications and Modules
1. **Battery Management System**
In battery management systems, the low R_DS(ON) characteristics of SI1903DL-T1-GE3-VB can effectively reduce power loss, making it very suitable for battery switching and protection circuits. This MOSFET can be used as a switching element for battery charging and discharging, and is particularly suitable for use in wearable devices or portable battery-powered devices.
2. **Power Management Circuit**
In power management systems, SI1903DL-T1-GE3-VB can provide efficient switching control in low voltage and negative voltage environments. This makes it very suitable for low-power designs in DC-DC converters, buck converters, and boost converters. Its low on-resistance characteristics also help improve power conversion efficiency.
3. **Load Switch**
Due to its ability to handle negative voltages, the SI1903DL-T1-GE3-VB is suitable for load switch applications, especially for circuits that require negative power control. For example, in communication equipment, power switches, and power switching circuits associated with negative voltages, the SI1903DL-T1-GE3-VB can provide stable and reliable performance.
4. **Low Voltage and High Efficiency Current Control Module**
The SI1903DL-T1-GE3-VB can be applied to current control modules, especially in low voltage applications that require fast switching and low on-resistance. It is suitable for USB power management, LED driving, and intelligent power systems, especially in scenarios with multi-channel load control and power control.
5. **Automotive Electronic Systems**
This MOSFET can also be widely used in automotive electronic applications, such as power seats, window controls, and on-board battery management systems. Its efficient switching characteristics and durability make it suitable for these systems that require high reliability.
---
With its low R_DS(ON) and efficient switching characteristics, SI1903DL-T1-GE3-VB is a dual P+P-channel MOSFET suitable for a variety of power management and load switching applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page
