Product introduction：
1. **Product Introduction:**
SI1555DL-T1 is a bipolar N+P channel MOSFET in SC70-6 package, suitable for low voltage, high efficiency power management and switch control applications. This MOSFET has a dual channel design, integrating an N-type and a P-type MOSFET, with a maximum drain-source voltage (VDS) of ±20V and a maximum gate-source voltage (VGS) of ±20V, respectively, suitable for circuit designs that need to control the flow of current in both directions. Its threshold voltages are 1.0V (N-Channel) and -1.2V (P-Channel), respectively, which enables it to start up at low gate-source voltage and respond quickly. The on-resistance (RDS(ON)) of this model is: when VGS=2.5V, N-type is 110mΩ, P-type is 190mΩ; when VGS=4.5V, N-type is 90mΩ, P-type is 155mΩ. Its maximum leakage current (ID) is 3.28A (N-Channel) and -2.8A (P-Channel). SI1555DL-T1's Trench technology ensures lower conduction loss and higher switching efficiency, making it an ideal choice for low-power applications.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SC70-6 |
Dual-N+P |
±20V |
|
1.0/-1.2V |
3.28/-2.8A |
110/190mΩ |
|
|
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SC70-6 |
Dual-N+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SC70-6 |
Dual-N+P |
±20V |
|
1.0/-1.2V |
3.28/-2.8A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SC70-6 |
Dual-N+P |
±20V |
|
1.0/-1.2V |
3.28/-2.8A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SC70-6 |
Dual-N+P |
|
|
|
|
|
|
|
2. **Detailed parameter description:**
- **Model**: SI1555DL-T1
- **Package type**: SC70-6
- **Configuration**: Dual N+P type MOSFET
- **Drain-source voltage (VDS)**: ±20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**:
- N-Channel: 1.0V
- P-Channel: -1.2V
- **On-resistance (RDS(ON))**:
- @VGS=2.5V:
- N-Channel: 110mΩ
- P-Channel: 190mΩ
- @VGS=4.5V:
- N-Channel: 90mΩ
- P-Channel: 155mΩ
- **Maximum leakage current (ID)**:
- N-Channel: 3.28A
- P-Channel: -2.8A
- **Technology type**: Trench technology
- **Power dissipation capability**: Determined according to the use environment and heat dissipation design, suitable for low-power circuits.
Domain and module applications：
3. **Application fields and module examples:**
# 1. **Power management of battery-powered devices:**
SI1555DL-T1-VB is widely used in battery-powered devices. Due to its low on-resistance, it can effectively reduce battery loss and extend battery life in low-power applications. It is particularly suitable for scenarios such as mobile devices, battery management systems, and Internet of Things (IoT) sensors. Through its efficient power switching characteristics, it can provide excellent performance in energy saving and stability.
# 6. **Portable electronic products:**
SI1555DL-T1-VB is widely used in various portable electronic products such as Bluetooth headsets, portable speakers, and smart watches due to its low on-resistance and high switching efficiency. These products have high requirements for battery life. This MOSFET can effectively reduce energy consumption and improve the battery life of the product.
# 7. **Wearable devices:**
Wearable devices such as smart watches and health monitoring devices require efficient power management to extend battery life. The high efficiency of SI1555DL-T1-VB, especially in small size devices, makes it an ideal power switch choice for such devices. It can avoid excessive power consumption while ensuring high efficiency.
Summary:
SI1555DL-T1-VB is a high-efficiency, low-power dual N+P-type MOSFET in SC70-6 package, suitable for various low-voltage, high-efficiency power management and switching applications. Its low on-resistance, fast switching and high efficiency make it an ideal choice for battery-driven devices, power converters, LED drivers, smart home devices and other fields. In these applications, it can significantly improve energy efficiency, reduce power loss, and extend the service life of the equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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