Product introduction:
1. Product Introduction
**SI1553DL-T1-GE3-VB** is a dual N+P channel MOSFET in SC70-6 package, designed for low power and high efficiency switching applications. It has a maximum drain-source voltage (VDS) of ±20V, and a maximum drain current (ID) of 3.28A (N-Channel) and -2.8A (P-Channel), which is suitable for circuits that need to switch the current direction or power management. The on-resistance (RDS(ON)) of this MOSFET is 110mΩ (N-Channel)/190mΩ (P-Channel) at different gate-source voltages @VGS=2.5V and 90mΩ (N-Channel)/155mΩ (P-Channel) at @VGS=4.5V. These features make it very popular in battery-powered devices, power management circuits, and applications that require dual-channel control. The manufacturing process using Trench technology enables it to have lower conduction loss and higher switching efficiency, which can effectively improve the energy efficiency of the system.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SC70-6 |
Dual-N+P |
±20V |
|
1.0/-1.2V |
3.28/-2.8A |
110/190mΩ |
|
|
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SC70-6 |
Dual-N+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SC70-6 |
Dual-N+P |
±20V |
|
1.0/-1.2V |
3.28/-2.8A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SC70-6 |
Dual-N+P |
±20V |
|
1.0/-1.2V |
3.28/-2.8A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SC70-6 |
Dual-N+P |
|
|
|
|
|
|
|
II. Detailed parameter description
- **Package form**: SC70-6
- **Configuration**: Dual-N+P-Channel (dual N+P channel)
- **VDS (drain-source voltage)**: ±20V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**:
- N-Channel: 1.0V
- P-Channel: -1.2V
- **RDS(ON) (on-resistance)**:
- @VGS=2.5V: N-Channel 110mΩ, P-Channel 190mΩ
- @VGS=4.5V: N-Channel 90mΩ, P-Channel 155mΩ
- **ID (maximum leakage current)**:
- N-Channel: 3.28A
- P-Channel: -2.8A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 150°C
Domain and module applications:
III. Application Fields and Module Examples
1. **Battery Management System (BMS)**
SI1553DL-T1-GE3-VB is suitable for battery management systems (BMS), especially in applications that require dual-channel control, such as battery charge and discharge management. As an efficient switching element, MOSFET can regulate the battery charge and discharge process, improve battery management efficiency, and extend battery life. Due to its low on-resistance characteristics, it can provide efficient current control while reducing power consumption.
2. **Power Management Circuit**
As a dual-channel MOSFET, SI1553DL-T1-GE3-VB is suitable for power management circuits that require positive and negative power management, such as DC/DC converters, Buck converters, Boost converters, etc. In these applications, MOSFET can effectively switch positive and negative power currents, improve system efficiency and reduce heat loss. This product is widely used in low-voltage power supplies and high-efficiency power modules.
3. **Bidirectional current control**
In applications that require bidirectional current control, SI1553DL-T1-GE3-VB is an ideal choice as a dual N+P channel MOSFET. For example, it can be used in current switching control modules for inverters, battery management for electric vehicles, inverters for solar panels, and other electrical systems involving bidirectional current flow. The combination of P-Channel and N-Channel can handle current flow in both positive and negative directions, enabling precise current switching and control.
4. **Power tools and home appliances**
In power modules in power tools and home appliances (such as washing machines, microwave ovens, etc.), SI1553DL-T1-GE3-VB can be used as an efficient switching element for current control. By effectively managing the flow of current, higher energy efficiency can be achieved while reducing power losses in the system. It is particularly suitable for power supply designs that require small size and high efficiency.
5. **Motor Drive and Control Module**
In motor drive applications, especially the drive and control of DC motors, SI1553DL-T1-GE3-VB can be used as a power switch to regulate the start, stop, direction switching and speed regulation of the motor. The low on-resistance and high current carrying capacity of this MOSFET make it suitable for motor drive modules that require fast switching and precise control.
6. **Sensors and Smart Hardware**
For smart hardware and sensor applications, SI1553DL-T1-GE3-VB can be used as an efficient power switch to provide stable current management. Especially in Internet of Things (IoT) devices, this MOSFET can be used for power switching, battery management and system protection. Due to its compact SC70-6 package, it performs well in space-constrained smart hardware.
7. **Electric vehicles**
In the power supply system of electric vehicles such as electric bicycles and electric scooters, SI1553DL-T1-GE3-VB can be used for current control and battery management to ensure the efficiency and reliability of the power supply system. By accurately controlling the flow of current, it helps improve battery efficiency and reduce power loss during charging.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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