Product introduction：
Product Introduction
**SI1551DL-T1-GE3-VB** is a MOSFET with a dual-channel configuration (N-channel + P-channel) in an SC70-6 package, designed for low-voltage, high-efficiency applications. This MOSFET has a maximum drain-source voltage (VDS) of ±20V, suitable for applications where the flow of positive and negative currents needs to be controlled simultaneously. The on-resistance of its N-channel and P-channel are 110mΩ and 190mΩ, respectively, at VGS=2.5V, and 90mΩ and 155mΩ, respectively, at VGS=4.5V, capable of providing efficient switching performance under low-voltage operation. The maximum drain currents are 3.28A (N-channel) and -2.8A (P-channel), respectively, which are very suitable for applications such as load switching, battery management, and power regulation.
File download
Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SC70-6 |
Dual-N+P |
±20V |
|
1.0/-1.2V |
3.28/-2.8A |
110/190mΩ |
|
|
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SC70-6 |
Dual-N+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SC70-6 |
Dual-N+P |
±20V |
|
1.0/-1.2V |
3.28/-2.8A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SC70-6 |
Dual-N+P |
±20V |
|
1.0/-1.2V |
3.28/-2.8A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SC70-6 |
Dual-N+P |
|
|
|
|
|
|
|
Detailed parameter description
- **Model**: SI1551DL-T1-GE3-VB
- **Package type**: SC70-6
- **Configuration**: Dual channel (N channel + P channel)
- **Maximum drain-source voltage (VDS)**: ±20V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**:
- N channel: 1.0V
- P channel: -1.2V
- **On-resistance (RDS(ON))**:
- N channel (VGS=2.5V): 110mΩ
- P channel (VGS=2.5V): 190mΩ
- N channel (VGS=4.5V): 90mΩ
- P channel (VGS=4.5V): 155mΩ
- **Maximum drain current (ID)**:
- N channel: 3.28A
- P channel: -2.8A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Load switch**
**SI1551DL-T1-GE3-VB** is very effective in load switch circuits, especially for switching positive and negative currents. Its dual-channel characteristics enable it to handle bidirectional current flow and is widely used in portable devices, smart home systems, and wireless communication devices.
2. **Battery Management System (BMS)**
As an important component in the battery management system, **SI1551DL-T1-GE3-VB** can provide efficient current switching and voltage regulation to ensure low power loss during battery charging and discharging. It is suitable for applications such as handheld devices, wearable devices, and smart home battery management systems.
3. **Power regulation and voltage conversion**
This MOSFET is very suitable for power regulation circuits, especially in low voltage and high-efficiency power conversion processes. Its low RDS(ON) characteristics enable power converters and DC-DC converters to reduce energy losses during operation and improve overall efficiency.
4. **Smart Battery Charger**
**SI1551DL-T1-GE3-VB** can be used in smart battery chargers to precisely control the charging and discharging process of the battery. The bipolar (N-channel and P-channel) characteristics of MOSFET are very suitable for complex battery management functions, which can provide a more stable and reliable power supply for the equipment.
5. **Power Tools and Small Electric Equipment**
This type of MOSFET can also be used in power tools and other small electric equipment, especially in situations where bidirectional current control is required. Its dual-channel design can effectively handle current switching, which helps to improve the performance and efficiency of power tools.
6. **Power Amplifier and Amplification Circuit**
In power amplifier design, **SI1551DL-T1-GE3-VB** can effectively control the amplification and switching of signals, especially suitable for audio amplifiers, wireless communication signal amplification and other fields. Its low RDS(ON) and high-efficiency switching performance help reduce power loss and ensure accurate signal amplification.
7. **Smart Sensors and IoT Applications**
**SI1551DL-T1-GE3-VB** is also suitable for power control and signal switching in IoT (Internet of Things) devices. For example, in applications such as smart home sensors and environmental monitoring equipment, MOSFET can provide low power consumption and efficient current management to ensure long-term stable operation of the equipment.
8. **Low-power LED drive circuit**
In LED lighting control, this MOSFET can be used in low-power LED drive circuits to help achieve efficient power conversion and low-power control. It is particularly suitable for battery-driven LED systems and can significantly extend the service life of the equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page
