Product introduction：
Product Introduction: SI1470DH-T1-GE3-VB MOSFET
SI1470DH-T1-GE3-VB is a single N-Channel MOSFET in SC70-6 package, suitable for low voltage and low power electronic applications. The maximum drain-source voltage (V_DS) of this MOSFET is 30V, the gate-source voltage (V_GS) is ±20V, the threshold voltage (V_th) is 1.7V, and it has low on-resistance and high switching efficiency. Using Trench technology, it has a low R_DS(ON), which makes it perform well in applications such as power management, DC-DC converters, and mobile device battery management, and can effectively reduce power consumption and improve system efficiency.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SC70-6 |
Single-N |
30V |
|
1.7V |
4.5A |
|
|
23mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SC70-6 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SC70-6 |
Single-N |
30V |
|
1.7V |
4.5A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SC70-6 |
Single-N |
30V |
|
1.7V |
4.5A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SC70-6 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description:
- **Package**: SC70-6
- **Configuration**: Single N-Channel
- **Drain-source voltage (V_DS)**: 30V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(ON))**:
- At V_GS = 4.5V: 27mΩ
- At V_GS = 10V: 23mΩ
- **Drain current (I_D)**: 4.5A
- **Technology**: Trench technology
Domain and module applications：
Application fields and module examples:
1. **Mobile device power management**:
SI1470DH-T1-GE3-VB performs well in power management modules for smartphones, portable electronic devices, tablets and other devices. Its low on-resistance and high-efficiency switching characteristics are suitable for battery-driven devices, helping to extend battery life and improve energy efficiency.
2. **DC-DC converter**:
In DC-DC converter applications, SI1470DH-T1-GE3-VB is an ideal switching element. Its low on-resistance reduces energy loss and improves conversion efficiency, making it particularly suitable for low-power power supply design and high-efficiency conversion systems.
3. **Battery management system**:
This MOSFET is used for switching and protection circuits in battery management systems. Its excellent on-resistance and low power consumption enable it to work reliably in battery power management systems to prevent overcharging, over-discharging and short circuits.
4. **LED Driver**:
Due to its low R_DS(ON), SI1470DH-T1-GE3-VB is suitable for LED driver. Its high switching efficiency ensures stable and energy-saving operation of LED lighting systems, especially in low-power applications, where it can achieve high energy efficiency.
5. **Smart Home and IoT Devices**:
SI1470DH-T1-GE3-VB can also be used in smart home and IoT devices, such as smart sensors, remote control devices, etc. Its small package and high efficiency make it suitable for low-power circuits, ensuring that the device can run for a long time without consuming too much power.
6. **Low-power Switching Power Supply**:
In low-power switching power supplies, SI1470DH-T1-GE3-VB provides a high-efficiency switching solution for small power modules, such as handheld devices, power management units for power tools, and charging power supplies.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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