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Si1416EDH-T1-GE3-VB Product details

Product introduction:

1. Product Introduction:

**Si1416EDH-T1-GE3-VB** is a high-performance single N-Channel MOSFET in SC70-6 package, designed for low voltage, high-efficiency applications. With a drain-source voltage (VDS) of 30V and a maximum drain current (ID) of 4.5A, the device is suitable for applications requiring high efficiency and fast switching. Si1416EDH-T1-GE3-VB uses advanced Trench technology to provide low on-resistance and fast switching characteristics. When the gate-source voltage (VGS) is 4.5V, the RDS(ON) is 27mΩ, and when the VGS is 10V, the RDS(ON) is lower, reaching 23mΩ. This low on-resistance characteristic makes it very suitable for applications such as high-efficiency power conversion and load switching. Its lower threshold voltage (Vth = 1.7V) enables the MOSFET to start at a lower voltage, suitable for low-power devices.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SC70-6 Single-N 30V 1.7V 4.5A 23mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SC70-6 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SC70-6 Single-N 30V 1.7V 4.5A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SC70-6 Single-N 30V 1.7V 4.5A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SC70-6 Single-N
2. Detailed parameter description:

- **Package**: SC70-6
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 27mΩ @ VGS=4.5V
- 23mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 4.5A
- **Technology**: Trench technology
- **Package type**: SC70-6 (surface mount)

Domain and module applications:

3. Applications and module examples:

**1. Power management and voltage regulators: **
Si1416EDH-T1-GE3-VB is ideal for power management systems, especially in applications that require high-efficiency power conversion. For example, it can be used in modules such as DC-DC converters, battery charge management systems, and voltage regulators. Its low on-resistance (RDS(ON)) and high current carrying capacity enable it to reduce power loss and improve system efficiency, making it suitable for low-power systems such as portable devices, power tools, and consumer electronics.

**2. Switching power supplies and load switches: **
Due to its excellent conduction characteristics, Si1416EDH-T1-GE3-VB is an ideal choice for switching power supplies and load switching applications. In switching power supply systems, it can be used for high-frequency switching operations to ensure low-power, high-efficiency power conversion. Especially in modules that require high switching frequencies, such as power adapters, LED driver power supplies, RF applications, etc., this MOSFET can provide excellent performance with fast response and low energy consumption.

**3. Portable Electronics: **
In small portable electronic devices (such as smartphones, tablets, mobile power supplies, Bluetooth headsets, etc.), Si1416EDH-T1-GE3-VB is often used for battery management, power switching, and efficient power design. Its small package (SC70-6) is particularly suitable for applications with limited space, while its low RDS(ON) value and high current carrying capacity enable it to provide stable and efficient performance during power switching, extending battery life.

**4. Low-power applications and IoT devices: **
Si1416EDH-T1-GE3-VB is suitable for a variety of low-power applications, especially in IoT (IoT) devices. As a low-voltage startup and extremely efficient MOSFET, it can be used in IoT devices that require stable power management and load switching. Smart sensors, wireless communication modules, and smart home devices can benefit from its high efficiency and low power consumption characteristics to meet long-term working and low energy consumption requirements.

**5. Communication equipment: **
Due to its low on-resistance and fast switching characteristics, Si1416EDH-T1-GE3-VB can also be used in power management modules and signal processing modules in communication equipment. In applications such as radio equipment, base station power supply modules, and satellite communications, MOSFET provides efficient current switching functions to ensure stable operation and efficient power conversion of the system.

In summary, Si1416EDH-T1-GE3-VB, as a low-power, high-efficiency single N-Channel MOSFET, is widely used in power management, switching power supplies, portable devices, battery management, low-power IoT devices, and communication equipment. It provides excellent power efficiency and efficient switching performance for various electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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