Product introduction：
Product Introduction
SI1315DL-T1-GE3-VB is a single P-channel MOSFET in SC70-3 package, designed for low voltage, high efficiency switching applications. The maximum drain-source voltage (V_DS) of this MOSFET is -20V, the maximum gate-source voltage (V_GS) is ±12V, and it has a low threshold voltage (V_th) of around -0.6V, ensuring fast startup at low voltage. Its on-resistance (R_DS(ON)) is 100mΩ (V_GS = 2.5V) and 80mΩ (V_GS = 4.5V) at different gate-source voltages, and the maximum leakage current (I_D) is -3.1A. Using Trench technology, this MOSFET has extremely low conduction losses in switching applications, and is suitable for a wide range of applications in power management systems and load switching modules with low power consumption and high energy efficiency requirements.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SC70-3 |
Single-P |
-20V |
|
-0.6V |
-3.1A |
100mΩ |
|
|
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SC70-3 |
Single-P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SC70-3 |
Single-P |
-20V |
|
-0.6V |
-3.1A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SC70-3 |
Single-P |
-20V |
|
-0.6V |
-3.1A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SC70-3 |
Single-P |
|
|
|
|
|
|
|
Detailed parameter description
- **Model**: SI1315DL-T1-GE3-VB
- **Package type**: SC70-3
- **Configuration**: Single P-channel MOSFET
- **Maximum drain-source voltage (V_DS)**: -20V
- **Maximum gate-source voltage (V_GS)**: ±12V
- **Threshold voltage (V_th)**: -0.6V
- **On-resistance (R_DS(ON))**:
- V_GS = 2.5V: 100mΩ
- V_GS = 4.5V: 80mΩ
- **Maximum leakage current (I_D)**: -3.1A
- **Technology type**: Trench technology
- **Maximum power dissipation**: According to working conditions and heat dissipation design (the specific value needs to be based on the application environment).
Domain and module applications：
Applications and Module Examples
SI1315DL-T1-GE3-VB is a P-channel MOSFET with low on-resistance and good switching performance, suitable for multiple low-voltage, high-efficiency power management and load switching modules. The following are typical applications of this MOSFET:
1. **Battery-powered devices**:
- Due to its low current loss, SI1315DL-T1-GE3-VB is very suitable for battery-powered devices, especially in mobile devices and sensors that require precise current management. The low on-resistance of this MOSFET can effectively extend battery life and reduce energy waste, making it suitable for use in portable electronic devices, wearable devices, etc.
2. **DC-DC converter**:
- In the DC-DC converter circuit, SI1315DL-T1-GE3-VB can be used as a switching element to help achieve efficient power conversion. Its low on-resistance characteristic enables it to significantly reduce losses and improve conversion efficiency during the conversion process, making it suitable for low-power and medium-power power management applications such as power adapters, chargers, load regulation, etc.
3. **Load Switch and Power Regulation**:
- SI1315DL-T1-GE3-VB can be used as a load switch for switching control of various electronic devices. Its low R_DS(ON) ensures high efficiency of load control and reduces the heat generated by switching losses, which is particularly suitable for battery-powered wireless communication devices and sensor modules.
4. **Switching Power Supply (SMPS)**:
- This MOSFET is suitable for switching power supply modules, especially in low-voltage, high-efficiency applications. Due to its fast response and low on-resistance, SI1315DL-T1-GE3-VB can effectively reduce power losses in power modules and is widely used in low-power adapters, LED power drivers, and power modules for other small electronic products.
5. **LED driver circuit**:
- In LED driver circuits, SI1315DL-T1-GE3-VB can be used as a power regulation and current control switch. Due to its low on-resistance and excellent switching performance, it is particularly suitable for low-power, high-efficiency lighting systems, which can improve the energy efficiency of the system and extend the working time of the equipment.
6. **Smart home system**:
- In smart home devices, SI1315DL-T1-GE3-VB can be used as a power management component and is widely used in smart lighting control, wireless sensors, smart sockets and other smart home appliances. Its high efficiency helps to extend battery life and reduce device energy consumption.
7. **Automotive electronic applications**:
- SI1315DL-T1-GE3-VB is also suitable for low-power automotive electronic systems, such as on-board sensors, battery management systems and control circuits of electric vehicles. The low on-resistance allows it to maintain high efficiency in battery-driven systems, reduce heat accumulation, and improve overall system efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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