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SI1301DL-T1-GE3-VB Product details

Product introduction:

SI1301DL-T1-GE3-VB Product Introduction

SI1301DL-T1-GE3-VB is a single P-channel MOSFET in SC70-3 package, manufactured with advanced Trench technology, with low on-resistance and good switching characteristics. Its maximum drain-source voltage (VDS) is -20V, which is suitable for low-voltage systems, especially in portable devices and small circuits. The threshold voltage (Vth) of this MOSFET is -0.6V, and the on-resistance is 80mΩ at VGS = 4.5V, which enables it to provide low power loss and high-efficiency current control. It is suitable for load switch control, battery management, battery protection circuits and other fields.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SC70-3 Single-P -20V -0.6V -3.1A 100mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SC70-3 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SC70-3 Single-P -20V -0.6V -3.1A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SC70-3 Single-P -20V -0.6V -3.1A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SC70-3 Single-P
Detailed parameter description

- **Package type**: SC70-3
- **Configuration**: Single P-Channel
- **VDS (drain-source voltage)**: -20V
- **VGS (gate-source voltage)**: ±12V
- **Vth (threshold voltage)**: -0.6V
- **RDS(ON) (on-resistance)**:
- @ VGS = 2.5V: 100mΩ
- @ VGS = 4.5V: 80mΩ
- **ID (drain current)**: -3.1A
- **Technology type**: Trench
- **Operating temperature range**: Suitable for a wide working environment, especially for low-power power supply applications

Domain and module applications:

Application fields and module examples

1. **Low-power battery-driven devices**
SI1301DL-T1-GE3-VB is well suited for low-power battery-driven devices. Due to its low on-resistance and low power loss, it performs well in portable electronic devices such as smart watches, portable speakers, wireless headphones, etc. In these devices, MOSFETs can be used to control current flow and voltage regulation, improve battery life and optimize energy efficiency.

2. **Load switch control**
This MOSFET is also widely used in load switch control applications, especially for switch control for smaller loads. SI1301DL-T1-GE3-VB can switch current efficiently and is used in scenarios such as smart home devices, mobile power supplies, and LED lighting control. Its low RDS(ON) value can effectively reduce switching losses and improve the overall performance of the system.

3. **Battery protection circuit**
This MOSFET can be used in battery protection circuits to protect batteries from damage caused by over-discharge or over-charge. Due to its low on-resistance, SI1301DL-T1-GE3-VB can improve the efficiency of battery management systems for applications such as smartphones, portable battery-powered devices, and UPS power management. Its use in these systems can extend battery life and improve battery safety.

4. **Consumer Electronics**
In the consumer electronics field, SI1301DL-T1-GE3-VB can be widely used in various low-power devices such as smartphones, tablets, Bluetooth speakers, etc. Its small SC70-3 package makes it ideal for space-constrained applications, and its efficient current switching capability can optimize the device's power management system and improve battery efficiency.

5. **Low-Power Power Modules**
Due to its excellent switching characteristics and low RDS(ON) value, SI1301DL-T1-GE3-VB can also be used in low-power power modules, especially in low-voltage power converters. It can effectively reduce power loss and improve the overall efficiency of the system. It is suitable for power systems of consumer electronic products, such as portable power adapters, low-power DC-DC converters, etc.

6. **Smart home devices**
In smart home applications, SI1301DL-T1-GE3-VB can be used for switch control circuits, such as smart sockets, smart bulbs, etc. Its compact package and high efficiency make it very suitable for these smart home products, which can improve the overall product performance and power management, and provide efficient and long-term use experience.

7. **LED drive circuit**
SI1301DL-T1-GE3-VB is suitable for low-power LED drive circuits, which can effectively control the current flow, optimize power consumption and improve brightness stability. Its low RDS(ON) value reduces energy loss in the drive circuit, and is particularly suitable for small LED lamps, indicator lights, etc.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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