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SH8K12-VB Product details

Product introduction:

Product Introduction: SH8K12-VB MOSFET

SH8K12-VB is a bipolar N+N channel MOSFET in SOP8 package, designed for high-efficiency power management and switch control applications. Its maximum drain-source voltage (V_DS) is 30V, the maximum gate-source voltage (V_GS) is ±20V, the threshold voltage (V_th) is 1.7V, and it has a low on-resistance. The on-resistance of SH8K12-VB is 22mΩ at V_GS = 10V and 26mΩ at V_GS = 4.5V, and the drain current (I_D) is 6.8A and 6.0A respectively. This MOSFET adopts Trench technology, has good switching characteristics and low conduction loss, and is suitable for application in high-efficiency power modules, motor drives and load switches. Its high efficiency and low power consumption make it an ideal switching element in many medium and high power electronic devices.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Dual-N+N 30V 1.7V 6.8/6.0A 22mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Dual-N+N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Dual-N+N 30V 1.7V 6.8/6.0A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Dual-N+N 30V 1.7V 6.8/6.0A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Dual-N+N
Detailed parameter description:

- **Package**: SOP8
- **Configuration**: Bipolar N+N channel
- **Drain-source voltage (V_DS)**: 30V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(ON))**:
- 26mΩ (V_GS = 4.5V)
- 22mΩ (V_GS = 10V)
- **Drain current (I_D)**:
- 6.8A (N-Channel 1)
- 6.0A (N-Channel 2)
- **Technology**: Trench technology

Domain and module applications:

Application fields and module examples:

1. **Power management and DC-DC converter**:
SH8K12-VB is suitable for various power management systems, especially DC-DC converters. In these systems, low on-resistance and high current carrying capacity enable it to effectively improve power conversion efficiency and reduce energy loss. Especially in applications that require fast switching and high current handling, SH8K12-VB provides stable current transmission to ensure efficient operation of the system.

2. **Load switching and power distribution**:
This MOSFET can be used in load switching and power distribution applications. Due to its low on-resistance, SH8K12-VB can reduce power loss and improve the efficiency of load switching systems. Its dual N-channel configuration makes it excel in multiple load switching and power distribution, and is suitable for power switch management in consumer electronics, communication equipment, and industrial control systems.

3. **Motor Drives**:
SH8K12-VB can be applied to motor drive systems, especially in small power tools, home appliances and industrial motor control. Its high current carrying capacity and low on-resistance enable it to efficiently control the current flow, reduce power loss in the motor drive circuit, and improve the operating efficiency of the motor, suitable for applications requiring efficient current regulation.

4. **LED Driver**:
In LED driver, SH8K12-VB can provide stable current output to help optimize the brightness control of LED. Due to its low on-resistance characteristics, it can reduce power loss, thereby improving the efficiency of the overall lighting system. It is suitable for various types of medium and high power LED lighting equipment, especially in high-efficiency lighting applications, it can reduce heat and power loss.

5. **Wireless Communication and RF Module**:
In wireless communication equipment and RF power amplifiers, SH8K12-VB can be used as a switching element to optimize signal conditioning and power management. Its good switching speed and low on-resistance make it outstanding in high-frequency applications, suitable for base stations, signal processing and other RF power amplification applications.

6. **Home Appliance Power Management and Control**:
SH8K12-VB is used in home appliances such as air conditioners, refrigerators, washing machines, etc., providing excellent working efficiency through efficient power management and control. It can play an important role in power conversion and energy efficiency optimization as a switching element, reducing power loss and improving the energy efficiency of overall electrical products.

7. **Battery Management System (BMS)**:
In the battery management system, SH8K12-VB can effectively regulate the charging and discharging process of the battery, providing stable and efficient current control. It is especially suitable for electric vehicles (EV) and energy storage systems to ensure that the battery maintains high efficiency and long life during charging and discharging.

In summary, as a dual N-channel MOSFET, SH8K12-VB is suitable for various applications such as power management, drive control, load switching and battery management due to its low on-resistance, high current carrying capacity and efficient switching performance. It can significantly improve system efficiency, reduce energy loss and provide stable power control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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