Product introduction:
Product Introduction: S3017SD-VB
S3017SD-VB is a half-bridge structure MOSFET in SOP8 package, configured as N+N channel, designed for high-efficiency, high-power applications. This type of MOSFET has extremely low on-resistance (RDS(ON)), suitable for power management and switching power supply applications that require low power consumption and high current load control. The maximum drain-source voltage of S3017SD-VB is 30V, the maximum drain current is 8A, and it has excellent switching performance and thermal performance, suitable for high-frequency, high-power applications.
This half-bridge configuration can control two N-channel MOSFETs at the same time, providing efficient current switching, and is commonly used in DC-DC converters, motor drives, and various power control circuits. The use of Trench technology further reduces the on-resistance, improves efficiency, and reduces power loss. The SOP8 package makes it suitable for applications with limited space and high requirements.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Half-Bridge-N+N |
30V |
|
1.7V |
8A |
|
|
8mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Half-Bridge-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Half-Bridge-N+N |
30V |
|
1.7V |
8A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Half-Bridge-N+N |
30V |
|
1.7V |
8A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Half-Bridge-N+N |
|
|
|
|
|
|
|
Detailed parameter description:
- **Package type**: SOP8
- **Configuration**: Half-Bridge N+N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V (maximum gate voltage range)
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 8mΩ @ VGS=10V
- **Maximum drain current (ID)**: 8A
- **Technology**: Trench technology, suitable for high-performance applications.
Domain and module applications:
Application fields and module examples:
1. **DC-DC converter**:
Due to its low RDS(ON) and high switching efficiency, S3017SD-VB is widely used in DC-DC converters, especially in situations where high-frequency conversion and low loss are required. For example, in high-efficiency power adapters, switching power supplies and battery management systems, this MOSFET can effectively reduce power loss and improve system efficiency.
2. **Motor drive and control**:
In motor drive systems, S3017SD-VB can control the current and voltage of DC motors or stepper motors as a half-bridge driver, providing efficient motor drive solutions. Low on-resistance and high switching frequency make it particularly suitable for use in motor controllers, servo drives, home appliances (such as electric fans, air conditioners) and other fields to ensure the stability and efficiency of motor drives.
3. **Power management module**:
Among various power management modules, S3017SD-VB can be used for power switching, load switching and other applications. Due to its half-bridge structure, it can handle two high-efficiency switches in one package at the same time. It is widely used in charging systems, battery management, and energy distribution systems, providing stable and efficient power management.
4. **Battery Management System (BMS)**:
In the battery management system, S3017SD-VB can provide fast current switching and voltage control to protect the battery and regulate the charging current and voltage. It is particularly suitable for applications such as electric vehicles (EVs) and portable battery-powered devices that require efficient power control and monitoring.
5. **Consumer Electronics and Communication Equipment**:
In consumer electronics and communication equipment, S3017SD-VB can efficiently perform power regulation and signal processing. For example, portable chargers, wireless devices, RF power amplifiers, etc., can reduce energy loss and improve the endurance of the device. Low RDS(ON) ensures high efficiency and thermal management under high frequency and high current conditions.
6. **LED Driver and Lighting Control**:
S3017SD-VB can also be used in LED drivers and lighting control systems to provide efficient current regulation and power conversion. Especially in lighting applications that require precise regulation and stable output, MOSFET can ensure efficient and long-lasting operation of the system and reduce heat dissipation problems.
In short, as a half-bridge MOSFET, S3017SD-VB is widely used in many high-efficiency and high-power applications such as DC-DC converters, motor drives, battery management, power management, consumer electronics, LED lighting, etc. with its efficient switching characteristics, low power consumption and good thermal management performance. Its SOP8 package makes it very suitable for applications with limited space, especially in circuit designs that require high efficiency and high-density integration.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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