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RUF020N02-VB Product details

Product introduction:

Product Introduction: RUF020N02-VB

RUF020N02-VB is a single N-channel MOSFET in SC70-3 package, designed for low voltage, high efficiency applications. This model has a low on-resistance (RDS(ON)) and a wide gate voltage adaptability range, making it very suitable for low power electronic devices, switching power supplies, RF applications and load switches. This MOSFET uses Trench technology, which improves switching speed while maintaining a low on-resistance, and has good electrical performance and thermal management capabilities.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SC70-3 Single-N 20V 0.5~1.5V 4A 48mΩ 36mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SC70-3 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SC70-3 Single-N 20V 0.5~1.5V 4A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SC70-3 Single-N 20V 0.5~1.5V 4A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SC70-3 Single-N
Detailed parameter description:

- **Package**: SC70-3
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V (maximum gate voltage range)
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 48mΩ @ VGS=2.5V
- 40mΩ @ VGS=4.5V
- 36mΩ @ VGS=10V
- **Maximum drain current (ID)**: 4A
- **Technology**: Trench technology, suitable for high-speed switching and low-power applications.

Domain and module applications:

Applications and module examples:

1. **Low-power electronic devices**:
Due to its low on-resistance, RUF020N02-VB is suitable for use in low-voltage operating environments, making it particularly suitable for applications that require high energy efficiency and long battery life, such as smart cards, sensors, and portable electronic devices.

2. **Switching power supply module**:
In switching power supply (SMPS) design, this MOSFET can provide fast switching speed and low conduction loss, suitable for low-power power supply design with voltage of 12V or below. For example, it can be used in DC-DC buck converters, boost converters, and inverters to effectively reduce power loss and improve conversion efficiency.

3. **Radio frequency (RF) applications**:
The low RDS(ON) and high switching frequency of RUF020N02-VB make it an ideal choice for RF circuits, especially in high-speed switching circuits such as RF amplifiers and mixers, where it can provide stable operating performance.

4. **Load Switch and Protection Circuit**:
In low voltage circuits, RUF020N02-VB can be used in load switch control circuits. For example, as a protection switch, it can quickly cut off the current when the load fails or overcurrent occurs to avoid damage to other electronic components.

5. **Wearable Devices**:
This MOSFET can also be used in power management systems for wearable devices, especially in environments that require high efficiency and low power consumption, such as smart watches, health monitoring devices, etc.

Through these applications, RUF020N02-VB can serve a wide range of small electronic products and smart devices, especially in battery-powered and high-performance applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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