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RUE002N05-VB Product details

Product introduction:

RUE002N05-VB Product Introduction

**RUE002N05-VB** is an **N-Channel** functional MOSFET using **Trench technology** and is packaged in **SC75-3**. This model has a **VDS** (drain-source voltage) of **60V**, suitable for low-power and miniaturized applications. Its **RDS(ON)** is **1100mΩ** at **VGS=10V**, showing excellent switching performance and low on-resistance, suitable for high-efficiency drive circuits, especially in applications requiring lower power consumption and higher reliability. Due to its lower **Vth** (threshold voltage) and **RDS(ON)**, this MOSFET is able to maintain better conduction characteristics at lower voltages.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SC75-3 Single-N 60V 1.7V 0.3A 1100mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SC75-3 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SC75-3 Single-N 60V 1.7V 0.3A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SC75-3 Single-N 60V 1.7V 0.3A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SC75-3 Single-N
RUE002N05-VB Detailed parameter description

- **Package**: SC75-3
- **Configuration**: Unipolar N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- **1320mΩ** at **VGS = 4.5V**
- **1100mΩ** at **VGS = 10V**
- **Maximum drain current (ID)**: 0.3A
- **Technology**: Trench technology
- **Application areas**:
- Low-power power management
- Battery-powered equipment
- Switching power supplies, DC-DC converters
- Low-power motor drives
- Mobile devices, portable electronic devices

Domain and module applications:

Application Examples

1. **Low Power Management Systems**:
The **low RDS(ON)** characteristics of the RUE002N05-VB make it ideal for use in low power power management systems. It can be used in DC-DC converters to improve efficiency, especially where small size and limited heat dissipation are required. The low on-resistance reduces power loss and increases the energy efficiency of the system, making it particularly suitable for embedded devices and wearable devices that require high efficiency energy conversion.

2. **Battery-Powered Devices**:
The **low Vth** and **low RDS(ON)** of this MOSFET make it ideal for use in battery-powered systems, especially when the system needs to operate efficiently at lower voltages. It is suitable for portable devices such as smartphones, handheld devices, and wireless sensor networks, and is able to maintain good conduction and stable current when the battery voltage is low.

3. **Low Power Motor Drive**:
In low power motor drive applications, the RUE002N05-VB can be used to drive low power motors such as fans, power tools, small appliances, etc. Due to its low **RDS(ON)**, this MOSFET can efficiently drive the motor, reduce heat generation, and improve system stability.

4. **Switching Power Supply and DC-DC Converter**:
This MOSFET is also very suitable for use in switching power supply (SMPS) and **DC-DC converter** modules. Its low on-resistance reduces power losses, making it very suitable for power management applications that require high efficiency and stable output, especially in miniaturized designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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