Product introduction：
Product Introduction
RU2013H-VB is a high-efficiency unipolar N-type MOSFET in SOP8 package, designed for low voltage and high current applications. Its maximum drain-source voltage (VDS) is 30V, and it can withstand up to 13A of leakage current, suitable for a variety of power management and switching applications. The threshold voltage (Vth) of this MOSFET is 1.7V, ensuring that it can be turned on reliably at a lower gate-source voltage. The on-resistance (RDS(ON)) is 11mΩ and 8mΩ at VGS of 4.5V and 10V respectively, providing extremely low power consumption, making it superior in high-performance electronic devices.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
|
8mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **Model**: RU2013H-VB
- **Package**: SOP8
- **Configuration**: Unipolar N-type
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 11mΩ @ VGS = 4.5V
- 8mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 13A
- **Technology**: Trench technology
Domain and module applications：
Applications and Module Examples
RU2013H-VB MOSFET is widely used in many fields and modules, including:
1. **Power Management**: In switch mode power supplies (SMPS) and DC-DC converters, this MOSFET can be used as an efficient switching element, suitable for power supply of consumer electronics such as computers and TVs.
2. **Motor Control**: This MOSFET has excellent performance in motor drive circuits and can handle high currents. It is widely used in power tools, fans and household appliances.
3. **LED Driver**: RU2013H-VB can be used as a driver in LED lighting to achieve brightness adjustment of LEDs through efficient switching control. It is suitable for commercial and home lighting solutions.
4. **Battery Management System**: In the charge and discharge control circuit of lithium batteries, this MOSFET can effectively manage current to ensure safe and efficient operation of batteries. It is suitable for portable devices and energy storage systems.
5. **Audio Amplifier**: RU2013H-VB can also be used as the output stage component of the audio amplifier. It can handle high current output and improve the quality of audio signals. It is widely used in audio equipment and home theater systems.
Through these application examples, the importance of RU2013H-VB in modern electronic equipment is reflected, especially in situations where high performance and high reliability are required.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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