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RU1H7H-VB Product details

Product introduction:

Product Introduction
RU1H7H-VB is a high-efficiency unipolar N-channel MOSFET in SOP8 package, designed for low to medium voltage applications. The maximum drain-source voltage (VDS) of this MOSFET is 100V, and it supports a drain current (ID) of up to 9A, making it an excellent performer in power management and switch control applications. With its moderate on-resistance and excellent switching characteristics, RU1H7H-VB can effectively improve the efficiency and reliability of the circuit.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Single-N 100V 1.8V 9A 32mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Single-N 100V 1.8V 9A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Single-N 100V 1.8V 9A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Single-N
Detailed parameter description
- **Model**: RU1H7H-VB
- **Package**: SOP8
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 33mΩ @ VGS=4.5V
- 32mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 9A
- **Technology**: Trench technology

Domain and module applications:

Applications and module examples
RU1H7H-VB is suitable for many electronic fields, including:

1. **Power management**: In DC-DC converters, this MOSFET can be used as an efficient switch to optimize voltage conversion, reduce energy consumption and improve system efficiency.

2. **Load switch**: In various consumer electronic products, RU1H7H-VB can quickly switch loads, optimize energy consumption performance, and ensure efficient operation of equipment.

3. **Motor drive**: In small motor control circuits, this MOSFET can be used to start and control motors to achieve stable and efficient motor drive.

4. **LED drive circuit**: In LED lighting modules, RU1H7H-VB can efficiently drive LEDs to ensure stable light output and energy saving effects.

5. **Audio amplifier**: In audio amplifier design, this MOSFET can be used for signal switching control to improve sound quality and reduce signal loss.

Through these applications, RU1H7H-VB helps designers achieve efficient circuit design and meet the needs of modern electronic products for high performance and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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