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RRS070N03-TB-VB Product details

Product introduction:

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RRS070N03-TB-VB is a high-efficiency single N-channel MOSFET in SOP8 package with 30V drain-source voltage (VDS) and 13A maximum drain current (ID). The device supports ±20V gate-source voltage (VGS) and threshold voltage (Vth) of 1.7V. Its on-resistance (RDS(ON)) is 11mΩ at VGS=4.5V and 8mΩ at VGS=10V. Designed based on Trench technology, RRS070N03-TB-VB exhibits excellent performance in low voltage and high current applications, suitable for a variety of power management and switch control schemes.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Single-N 30V 1.7V 13A 8mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Single-N 30V 1.7V 13A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Single-N 30V 1.7V 13A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Single-N
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- **Model:** RRS070N03-TB-VB
- **Package:** SOP8
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 30V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 1.7V
- **On-resistance (RDS(ON)):**
- 11mΩ(VGS=4.5V)
- 8mΩ(VGS=10V)
- **Maximum leakage current (ID):** 13A
- **Technology:** Trench

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Domain and module applications:

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RRS070N03-TB-VB is widely used in power management, switching power supplies (SMPS) and LED drive circuits of portable electronic devices. Its high efficiency and low on-resistance make it particularly suitable for battery-driven devices such as smartphones, tablets and wearable devices to help improve power conversion efficiency. In addition, this MOSFET can also be used in motor control, power amplifiers and various consumer electronics to meet the needs of modern high-performance electronic devices for energy efficiency and miniaturization.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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