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RQ3E150MNTB-VB Product details

Product introduction:

RQ3E150MNTB-VB Product Introduction

RQ3E150MNTB-VB is a high-performance N-Channel MOSFET in a compact DFN8 (3X3) package, designed for low voltage and high current applications. Its rated drain-source voltage (VDS) is 30V, and it can operate stably in a variety of low-voltage circuits. The on-resistance (RDS(ON)) of the device shows excellent performance at different gate-source voltages: 19mΩ at VGS=4.5V and 13mΩ at VGS=10V, which can effectively reduce power consumption and improve the overall efficiency of the system. The maximum drain current (ID) reaches 30A, ensuring reliable operation under high load conditions.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(3X3) Single-N 30V 1.7V 30A 13mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(3X3) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(3X3) Single-N 30V 1.7V 30A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(3X3) Single-N 30V 1.7V 30A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(3X3) Single-N
Detailed parameter description

- **Model**: RQ3E150MNTB-VB
- **Package**: DFN8(3X3)
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 19mΩ @ VGS=4.5V
- 13mΩ @ VGS=10V
- **Drain current (ID)**: 30A
- **Technology**: Trench

Domain and module applications:

Application fields and module examples

1. **High-efficiency switching power supply (SMPS)**:
- RQ3E150MNTB-VB can be used as a high-efficiency switching element in switching power supplies to ensure energy conversion efficiency under different load conditions and reduce energy loss.

2. **Motor drive**:
- This MOSFET is suitable for DC motor control and can efficiently drive small motors. It is widely used in household appliances, toys and small automation equipment.

3. **LED drive circuit**:
- RQ3E150MNTB-VB performs well in LED drive applications, can provide stable current, ensure efficient lighting of LEDs, and is suitable for various lighting solutions.

4. **Battery management system (BMS)**:
- In the battery management system, this MOSFET can be used for battery charge and discharge control, improve the safety and energy utilization efficiency of the system, and is widely used in electric vehicles and portable devices.

5. **Signal Switching and Control**:
- Due to its low on-resistance and high efficiency, the RQ3E150MNTB-VB is suitable for signal switching applications, enabling efficient signal transmission and control in various electronic devices.

Through these application examples, the RQ3E150MNTB-VB shows its importance in low voltage and high power environments, making it an ideal choice in power electronics design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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