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RQ1E100XN-VB Product details

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Product introduction：

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The RQ1E100XN-VB is a high-efficiency single N-channel MOSFET in a DFN8(3x3) package with a drain-source voltage (VDS) of 30V and a maximum drain current (ID) of 13A. The device supports a gate-source voltage (VGS) of ±20V and a threshold voltage (Vth) of 1.7V. The on-resistance (RDS(ON)) is 11mΩ at VGS=4.5V and 8mΩ at VGS=10V. With its Trench technology design, the RQ1E100XN-VB excels in low-voltage and high-current applications and is suitable for a variety of power management solutions.

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Product parameter：

VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(3X3) Single-N 30V 1.7V 13A 8mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(3X3) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds18 Technology
DFN8(3X3) Single-N 30V 1.7V 13A Trench
VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds6 Technology
DFN8(3X3) Single-N 30V 1.7V 13A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(3X3) Single-N
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- **Model:** RQ1E100XN-VB
- **Package:** DFN8(3x3)
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 30V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 1.7V
- **On-resistance (RDS(ON)):**
- 11mΩ（VGS=4.5V）
- 8mΩ（VGS=10V）
- **Maximum leakage current (ID):** 13A
- **Technology:** Trench

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Domain and module applications：

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RQ1E100XN-VB is widely used in high-efficiency power management, switching power supplies (SMPS) and various portable devices. Its high conductivity and low power consumption make it very suitable for applications such as electric vehicle chargers and renewable energy inverters. In addition, this MOSFET can also be used in LED drive circuits, motor control and other fast-switching power management modules to help improve the overall efficiency and reliability of the system and meet the requirements of modern electronic products for high efficiency and miniaturization.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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