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RJK03E2DNS-VB Product details

Product introduction:

RJK03E2DNS-VB Product Introduction

RJK03E2DNS-VB is a high-efficiency unipolar N-channel MOSFET in a DFN8 (3x3 mm) package with excellent current handling capability and low on-resistance. With a drain-source voltage (VDS) of 30V, the device is suitable for medium and low voltage power management applications. It is designed to provide high efficiency and reliability, especially suitable for circuits with strict power loss requirements. With its low RDS(ON) value and excellent switching characteristics, the RJK03E2DNS-VB performs well in various power conversion and drive applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(3X3) Single-N 30V 1.7V 30A 13mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(3X3) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(3X3) Single-N 30V 1.7V 30A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(3X3) Single-N 30V 1.7V 30A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(3X3) Single-N
Detailed parameter description

- **Model**: RJK03E2DNS-VB
- **Package**: DFN8 (3x3 mm)
- **Configuration**: Unipolar N-channel
- **VDS**: 30V
- **VGS**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 19 mΩ @ VGS=4.5V
- 13 mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 30A
- **Technology**: Trench

Domain and module applications:

Application fields and module examples

RJK03E2DNS-VB has a wide range of applications and is suitable for the following fields and modules:

1. **Portable devices**: Due to its small DFN8 package, this MOSFET is very suitable for power management in portable devices such as smartphones, tablets and wearable devices, which can effectively extend battery life.

2. **DC-DC converter**: In various DC-DC converters, this device can be used as a switching element to provide efficient energy conversion, suitable for computer power supplies, automotive power supplies and industrial equipment.

3. **LED drive circuit**: RJK03E2DNS-VB can be used in LED lighting systems. It has fast switching characteristics and low power consumption, which can achieve efficient light source driving.

4. **Motor control**: In motor drive and control applications, this MOSFET provides stable current output, suitable for drive modules of power tools and household appliances.

5. **High-frequency circuit**: Due to its excellent switching performance, RJK03E2DNS-VB is suitable for high-frequency circuits, such as RF amplifiers and wireless communication equipment, ensuring high efficiency and stability.

By choosing RJK03E2DNS-VB, designers can achieve higher efficiency and reliability in multiple applications to meet the growing performance requirements of modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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