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RJJ0601JPN-00-02-VB Product details

Product introduction:

Product Introduction: RJJ0601JPN-00-02-VB

RJJ0601JPN-00-02-VB is a high-efficiency P-channel MOSFET in TO220 package, designed for high current and high efficiency applications. The device has a drain-source voltage (VDS) of -60V, which is suitable for circuits that require negative voltage. Its threshold voltage (Vth) is -2.5V, ensuring rapid turn-on even at low gate-source voltage. RDS(ON) is 9.9mΩ at VGS of 4.5V and drops to 8.2mΩ at VGS of 10V, showing its extremely low on-resistance, which can effectively reduce power consumption and adapt to various high-power requirements.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-P -60V -2.5V -90A 8.2mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-P -60V -2.5V -90A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-P -60V -2.5V -90A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-P
Detailed parameter description

- **Model**: RJJ0601JPN-00-02-VB
- **Package**: TO220
- **Configuration**: Unipolar P-channel
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 9.9mΩ (at VGS=4.5V)
- 8.2mΩ (at VGS=10V)
- **Maximum leakage current (ID)**: -90A
- **Technology**: Trench

Domain and module applications:

Applications and modules

RJJ0601JPN-00-02-VB has a wide range of applications in multiple fields and modules, here are some specific examples:

1. **Power Management**: This MOSFET performs well in switch mode power supplies (SMPS) and other power management applications, effectively managing the switching control of power supplies and improving overall efficiency.

2. **Electric Vehicle**: In the power control system of electric vehicles, RJJ0601JPN-00-02-VB can be used for battery management and drive circuits, providing high current capability and stability to ensure system safety and efficiency.

3. **Solar Inverter**: This device is suitable for solar inverter applications, through its low on-resistance and high current capability, it improves energy conversion efficiency and optimizes the overall performance of the solar system.

4. **LED Driver**: RJJ0601JPN-00-02-VB can be used in high-power LED lighting drive circuits to ensure stable drive performance and brightness.

5. **Load Switch**: This MOSFET is very suitable for various load switch applications, which can effectively control the power switch of home appliances and industrial equipment and improve power transfer efficiency.

Through these applications, RJJ0601JPN-00-02-VB provides a reliable and efficient solution for modern electronic products, meeting a variety of high-power and high-efficiency circuit requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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