Product introduction：
Product Introduction
QM2606C1-VB is a high-efficiency dual N+P channel MOSFET in an ultra-small SC70-6 package, designed for low voltage and low power applications. The device has a withstand voltage (VDS) of ±20V and can provide up to 3.28A of N channel current and -2.8A of P channel current. Its on-resistance (RDS(ON)) performs well at different gate voltages: when VGS is 2.5V, the on-resistance of the N channel and P channel is 110mΩ and 190mΩ respectively, while it is reduced to 90mΩ and 155mΩ when VGS is 4.5V. This low on-resistance ensures that power consumption can be effectively reduced during use, making it suitable for power management, switch control and other high-efficiency circuits. The threshold voltage (Vth) of QM2606C1-VB is 1.0V (N-channel) and -1.2V (P-channel), which can achieve fast switching at a lower gate voltage and adopts Trench technology to ensure good switching performance.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SC70-6 |
Dual-N+P |
±20V |
|
1.0/-1.2V |
3.28/-2.8A |
110/190mΩ |
|
|
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SC70-6 |
Dual-N+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SC70-6 |
Dual-N+P |
±20V |
|
1.0/-1.2V |
3.28/-2.8A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SC70-6 |
Dual-N+P |
±20V |
|
1.0/-1.2V |
3.28/-2.8A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SC70-6 |
Dual-N+P |
|
|
|
|
|
|
|
Detailed parameter description
- **Model**: QM2606C1-VB
- **Package**: SC70-6
- **Configuration**: Dual N+P channel
- **Withstand voltage (VDS)**: ±20V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**:
- N channel: 1.0V
- P channel: -1.2V
- **On-resistance (RDS(ON)）**:
- @ VGS=2.5V: N channel 110mΩ, P channel 190mΩ
- @ VGS=4.5V: N channel 90mΩ, P channel 155mΩ
- **Maximum continuous current (ID)**:
- N channel: 3.28A
- P channel: -2.8A
- **Technology**: Trench technology
Domain and module applications：
Application fields and module examples
1. **Power management**
- QM2606C1-VB is suitable for switching power supplies and DC-DC converters. With its dual-channel design, it can effectively manage the power flow in miniaturized power modules and is widely used in consumer electronics and portable devices.
2. **Signal switch**
- This MOSFET can be used in low-power signal switching applications, such as audio signal switches, sensor interfaces, etc., to ensure efficient and stable signal transmission.
3. **LED drive**
- In LED drive circuits, QM2606C1-VB can achieve precise current control, suitable for various lighting equipment, and provide uniform brightness output.
4. **Battery management system**
- This device is suitable for battery management applications, can efficiently control the charging and discharging process, ensure the safety and efficient operation of the battery, and is widely used in electric vehicles and renewable energy storage systems.
5. **Consumer Electronics**
- In modern consumer electronics, the QM2606C1-VB is used as a switching element to efficiently manage power, making it suitable for applications in portable devices such as smartphones and tablets.
Through these application examples, the QM2606C1-VB demonstrates its wide applicability in multiple fields to meet the needs of modern high-performance electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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