Product introduction：
Product Introduction
PSMN4R4-80PS-VB is a high-efficiency N-channel MOSFET in TO220 package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) is 80V, making it suitable for a variety of power management and switching applications requiring high voltage resistance. The device has a low on-resistance (RDS(ON)), which is 3.6mΩ and 3mΩ at gate voltages of 4.5V and 10V, respectively, effectively reducing switching losses. The maximum drain current (ID) is up to 195A, which can meet high power requirements and is suitable for a variety of high-performance electronic devices.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
80V |
|
3V |
195A |
|
|
3mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
80V |
|
3V |
195A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
80V |
|
3V |
195A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **Model**: PSMN4R4-80PS-VB
- **Package**: TO220
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 3.6mΩ @ VGS = 4.5V
- 3mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 195A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
1. **Power management**: PSMN4R4-80PS-VB is very suitable for high-efficiency switching power supplies (SMPS). Its low on-resistance can significantly reduce energy loss and improve the overall efficiency of the system.
2. **Motor drive**: In the motor control system, this MOSFET can efficiently drive high-power motors, ensure stable operation under high current conditions, reduce heat generation, and improve system reliability.
3. **Battery management system**: Suitable for battery protection and charging management, it can maintain good performance under high current and high voltage, ensuring a safe and efficient charging process.
4. **DC-DC converter**: PSMN4R4-80PS-VB can be used as an efficient switch in the DC-DC converter, helping to improve conversion efficiency and reduce energy loss. It is widely used in various power supply designs.
5. **LED drive**: In the LED drive circuit, this MOSFET can be used as an efficient switch to provide a stable current supply. It is suitable for various lighting applications to ensure reliable brightness and long life.
With its excellent performance, PSMN4R4-80PS-VB excels in high-power and high-efficiency electronic applications, making it an ideal choice for designers and engineers.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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