Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SC75-3 |
Single-N |
20V |
|
0.5~1.5V |
0.85A |
390mΩ |
|
|
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SC75-3 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SC75-3 |
Single-N |
20V |
|
0.5~1.5V |
0.85A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SC75-3 |
Single-N |
20V |
|
0.5~1.5V |
0.85A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SC75-3 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **Model**: PMR400UN-VB
- **Package type**: SC75-3
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 390mΩ @ VGS = 2.5V
- 270mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: 0.85A
- **Technology**: Trench technology
Domain and module applications：
Applications and modules
PMR400UN-VB MOSFET is widely used in many fields and modules, including:
1. **Portable electronic devices**: Due to its small SC75-3 package, PMR400UN-VB is very suitable for power management modules of portable devices such as smartphones and tablets to achieve efficient power switching and control.
2. **LED drive circuit**: In LED lighting applications, this MOSFET can be used as a switch control, providing low on-resistance to ensure stable operation of LEDs, improve energy efficiency and extend service life.
3. **Battery management system**: PMR400UN-VB can be used as a switching element in the battery protection circuit to effectively prevent overcurrent and short circuit, and improve battery safety and service life.
4. **Small motor drive**: In low-power DC motor drive applications, this MOSFET can be used as a control switch to optimize the integration and switching performance of the motor drive circuit.
5. **Signal switch and logic level conversion**: The low threshold voltage and good conduction characteristics of PMR400UN-VB make it suitable for use as a switch in signal processing circuits to efficiently control signal paths.
In summary, PMR400UN-VB MOSFET shows excellent performance in low-voltage and miniaturized applications, and is widely used in various fields of modern electronic equipment, with good market prospects.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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