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P3710AV-VB Product details

Product introduction:

P3710AV-VB MOSFET Product Introduction

P3710AV-VB is a single N-channel power MOSFET in SOP8 package, designed for high voltage applications. Its drain-source voltage (VDS) can reach 100V and can withstand a drain current (ID) of up to 9A. The on-resistance of this MOSFET is 32mΩ at VGS=10V and 33mΩ at VGS=4.5V, ensuring low power consumption and high efficiency under various working conditions. P3710AV-VB uses advanced trench technology, which enables it to perform well in high power density applications and is suitable for a variety of electronic devices.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Single-N 100V 1.8V 9A 32mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Single-N 100V 1.8V 9A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Single-N 100V 1.8V 9A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Single-N
P3710AV-VB Detailed Parameters

| Parameters| Value| Description|
|------------|------------------------|-------------------------------|
| Package| SOP8 | Small surface mount package|
| Configuration| Single N-channel| Contains only one N-channel MOSFET |
| Drain-source voltage (VDS) | 100V | Maximum tolerable drain-source voltage|
| Gate-source voltage (VGS) | ±20V | Maximum gate-source voltage range|
| Threshold voltage (Vth) | 1.8V | Gate-source voltage required for turn-on|
| On-resistance (RDS(ON)) | 32mΩ @ VGS=10V
33mΩ @ VGS=4.5V | Internal resistance for drain current conduction|
| Drain current (ID) | 9A | Maximum current under specified conditions |
| Technology type | Trench | Provides high power density and low on-resistance |

Domain and module applications:

Application fields and module examples

1. **Power management**: P3710AV-VB can be widely used in switching power supplies and DC-DC converters, especially in high-voltage environments. Its low on-resistance helps reduce conversion losses and improve power efficiency, making it suitable for industrial power supplies and computer power systems.

2. **Motor drive**: In motor control applications, this MOSFET is suitable for H-bridge circuits to control the rotation direction and speed of the motor. Due to its high voltage and high current carrying capacity, P3710AV-VB is an ideal choice for power tools and electric vehicle drive systems.

3. **LED drive**: P3710AV-VB can be used in switching circuits in LED lighting and other lighting systems to provide fast and efficient current control. Its excellent on-resistance and thermal management characteristics can ensure high brightness and long life LED lighting.

4. **Battery management system (BMS)**: In battery management systems, this MOSFET can be used as a control switch for charging and discharging to ensure efficient battery charging and discharging processes. Its high voltage resistance and good thermal properties make it widely used in electric vehicles and portable electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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