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P12NK80Z-VB Product details

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Product introduction：

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P12NK80Z-VB is a high voltage N-channel MOSFET in TO220 package with 800V drain-source voltage and ±30V gate-source voltage range. This device adopts SJ_Multi-EPI technology, designed for high-efficiency switching and power management, and can provide excellent performance and reliability in high voltage applications.

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Product parameter：

VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 800V 3.5V 9A 600mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds18 Technology
TO220 Single-N 800V 3.5V 9A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds6 Technology
TO220 Single-N 800V 3.5V 9A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
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- **VDS（drain-source voltage）：** 800V
- **VGS（gate-source voltage）：** ±30V
- **Vth（threshold voltage）：** 3.5V
- **RDS(ON)（on-resistance）：** 600mΩ @ VGS=10V
- **ID（maximum drain current）：** 9A
- **Technology type：** SJ_Multi-EPI

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Domain and module applications：

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P12NK80Z-VB is widely used in high-voltage systems such as switching power supplies, inverters and motor drives. Its high drain-source voltage and low on-resistance characteristics make it excellent in power management and can effectively reduce energy loss. In fields such as industrial automation, renewable energy systems (such as solar inverters) and electric vehicles, this MOSFET provides reliable performance and meets the needs of high current and high voltage. **P12NK80Z-VB
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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