Product introduction：
1. NDS9958-NL-VB Product Introduction
NDS9958-NL-VB is a high-performance dual N+P channel MOSFET in SOP8 package, designed for high-efficiency and low-power power management applications. The maximum drain-source voltage (VDS) of the device is ±30V, and the limit of the gate-source voltage (VGS) is ±20V, making it suitable for various power switch and load management scenarios. The turn-on voltage (Vth) of the N channel is 1.6V, while the turn-on voltage of the P channel is -1.7V, both of which support low-voltage drive to ensure fast response. The on-resistance (RDS(ON)) of the device at VGS = 4.5V is 24mΩ (N channel) and 50mΩ (P channel), which is reduced to 18mΩ and 40mΩ respectively at VGS = 10V, significantly improving the current conduction efficiency. The **Trench technology** of this MOSFET further reduces switching losses, making it particularly suitable for battery-powered devices, switching power supplies and other applications requiring high efficiency.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
|
18/40mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+P |
|
|
|
|
|
|
|
2. NDS9958-NL-VB Detailed parameter description
| **Parameter** | **Value** | **Description** |
|-----------------------|------------------------|------------------------------------------|
| **Package type** | SOP8 | Small size package, suitable for high-density circuit design. |
| **MOSFET configuration** | Dual N+P channel | Provides simultaneous N channel and P channel for enhanced flexibility. |
| **Drain-source voltage (VDS)** | ±30V | Suitable for switching applications in a variety of low-voltage systems. |
| **Gate-source voltage (VGS)** | ±20V | Wide driving voltage range to meet different application requirements. |
| **Turning voltage (Vth)** | 1.6V (N channel) / -1.7V (P channel) | Suitable for low voltage drive, fast response. |
| **On-resistance(RDS(ON))** | 24mΩ @ VGS=4.5V (N) | Reduce power consumption and improve system efficiency. |
| **On-resistance(RDS(ON))** | 50mΩ @ VGS=4.5V (P) | Provide lower switching losses. |
| **On-resistance(RDS(ON))** | 18mΩ @ VGS=10V (N) | Efficient current conduction, suitable for high current applications. |
| **On-resistance(RDS(ON))** | 40mΩ @ VGS=10V (P) | Reduce heat generation and improve system stability. |
| **Drain current(ID)** | ±8A | Support higher load current to meet various application requirements. |
| **Technology type** | Trench | Increase switching speed and reduce switching losses. |
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Domain and module applications：
III. Application Fields and Module Examples
1. **Power Management and Conversion**:
NDS9958-NL-VB is particularly suitable for **DC-DC Converter** and **Power Switch** modules, which can efficiently control the distribution and switching of power. Its dual N+P channel design allows flexible configuration and is suitable for various power adapters, chargers and regulated power supplies, ensuring low switching losses and high efficiency.
2. **Battery Management System (BMS)**:
In the **Battery Management System**, this MOSFET can be used for switching and protection functions of the battery pack. Due to its low on-resistance, it can effectively reduce energy loss, thereby improving the battery life and charging and discharging efficiency, which is very suitable for electric vehicles and portable electronic devices.
3. **Audio and Video Equipment**:
NDS9958-NL-VB is also widely used in **audio amplifiers** and **video processors**, providing reliable current control and switching functions. Its excellent conduction performance enables it to support high dynamic range audio signal processing and improve the performance of audio and video equipment.
4. **LED drive circuit**:
This MOSFET is suitable for **LED drive circuit** to control the switching and dimming of LEDs. Its dual N+P configuration can simplify circuit design, improve efficiency, ensure the stability of light and the accuracy of brightness adjustment.
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NDS9958-NL-VB is an ideal choice for various low-voltage power management applications with its ±30V voltage support, dual N+P channel design and excellent current conduction capability. In the fields of power management, battery management, audio and video equipment and LED driving, this MOSFET can significantly improve the efficiency and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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