Product introduction：
1. NCEP60T18-VB Product Introduction
NCEP60T18-VB is a high-efficiency **single-channel N-type MOSFET**, using **TO220 package**, designed for medium and high power applications. The device has a **drain-source voltage (VDS) of 60V** and a maximum drain current (ID) of **210A**, which makes it have excellent performance in high current applications. **The gate drive voltage (VGS) range is ±20V**, providing flexibility for circuit design. The **threshold voltage (Vth) of NCEP60T18-VB is 3V**, which can still maintain good performance under low voltage conditions. Its **on-resistance (RDS(ON)) is 3mΩ @ VGS=10V**, and **9mΩ @ VGS=4.5V**, ensuring extremely low conduction losses in high current applications. Using **Trench technology**, NCEP60T18-VB has excellent heat dissipation performance and high efficiency, suitable for various application scenarios requiring high power and high efficiency.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
60V |
|
3V |
210A |
|
|
3mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
60V |
|
3V |
210A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
60V |
|
3V |
210A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
2. NCEP60T18-VB Detailed Parameter Description
| **Parameter** | **Specification** | **Description** |
|----------------------|--------------------------------|---------------------------------------------|
| **Device Type** | N-Channel MOSFET | Single-channel N-type field effect transistor|
| **Package Type** | TO220 | Suitable for high power and high heat dissipation environments|
| **Drain-Source Voltage (VDS)** | 60V | Medium voltage applications, suitable for a variety of power management solutions|
| **Gate-Source Voltage (VGS)** | ±20V | Provides flexible control options and enhances the circuit's anti-interference ability|
| **Threshold Voltage (Vth)** | 3V | Minimum voltage required for gate turn-on|
| **On-resistance (RDS(ON))** | 3mΩ @ VGS=10V | Low on-resistance, reduced power consumption|
| | 9mΩ @ VGS=4.5V | On-state performance at lower voltages |
| **Maximum drain current (ID)** | 210A | Suitable for high current applications, ensuring good electrical performance |
| **Process technology** | Trench | Optimized design to improve electrical performance and heat dissipation |
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Domain and module applications：
3. Application fields and module examples
1. **Power Management**
NCEP60T18-VB is very suitable for **switching power supply (SMPS)** and **DC-DC converter**. As an efficient switching element, it can ensure high efficiency and low power consumption of the power system and is widely used in consumer electronics and industrial equipment.
2. **Motor Control**
This MOSFET can be used in **motor drive circuits**, suitable for power tools and industrial automation equipment, to achieve efficient motor control, support high current operation, and ensure system reliability.
3. **Battery Management Systems**
In battery management systems, NCEP60T18-VB is suitable for **charge and discharge control** to ensure battery safety and efficiency. It is particularly suitable for electric vehicles and renewable energy storage solutions to provide high power output.
4. **LED Drivers**
This device can be used in **LED lighting driver circuits** to achieve efficient current control and dimming functions to meet the high-efficiency requirements of modern lighting systems and support a variety of lighting applications.
5. **Industrial Automation**
NCEP60T18-VB can be used in **PLC control systems** and **industrial power modules** to provide strong current support for industrial equipment and ensure system stability and reliability.
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NCEP60T18-VB is a high-performance N-type MOSFET suitable for a wide range of application scenarios such as power management, motor control and LED driving. Its excellent performance and reliability make it an ideal choice for modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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