Product introduction：
1. NCEP3060EQ-VB Product Introduction
NCEP3060EQ-VB is a high-performance **single-channel N-type MOSFET**, using **DFN8(3x3) package**, designed for applications requiring high efficiency and high current. The device has a **drain-source voltage (VDS) of 30V** and can handle a maximum drain current (ID) of up to **70A**. Its **gate drive voltage (VGS) range is ±20V**, providing flexible control options. The **threshold voltage (Vth) of NCEP3060EQ-VB is 1.7V**, ensuring effective switching performance under low-voltage operation. The **on-resistance (RDS(ON)) of the device is 3mΩ @ VGS=4.5V and 2mΩ @ VGS=10V**, which greatly reduces conduction losses and is very suitable for use in power management and high-power applications. Using **Trench technology**, NCEP3060EQ-VB excels in thermal management and heat dissipation, ensuring the reliability and stability of the device under high load conditions.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(3X3) |
Single-N |
30V |
|
1.7V |
70A |
|
|
2mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(3X3) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(3X3) |
Single-N |
30V |
|
1.7V |
70A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(3X3) |
Single-N |
30V |
|
1.7V |
70A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(3X3) |
Single-N |
|
|
|
|
|
|
|
2. NCEP3060EQ-VB Detailed parameter description
| **Parameter** | **Specification** | **Description** |
|----------------------|--------------------------------|---------------------------------------------|
| **Device type** | N-Channel MOSFET | Single channel N-type field effect transistor|
| **Package type** | DFN8(3x3) | Compact package for space-constrained applications|
| **Drain-source voltage (VDS)** | 30V | Suitable for low to medium voltage applications|
| **Gate-source voltage (VGS)** | ±20V | Provides flexible control options and enhances anti-interference capabilities|
| **Threshold voltage (Vth)** | 1.7V | Minimum voltage required for gate turn-on|
| **On-resistance (RDS(ON))** | 3mΩ @ VGS=4.5V | On-resistance at a specific gate voltage, reducing conduction losses|
| | 2mΩ @ VGS=10V | On-resistance at a specific gate voltage, further reducing conduction losses|
| **Maximum drain current (ID)** | 70A | Can withstand higher currents, suitable for a variety of high-performance applications|
| **Process technology** | Trench | Optimized design, improved electrical performance and heat dissipation performance|
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Domain and module applications：
III. Application Fields and Module Examples
1. **Power Management**
NCEP3060EQ-VB can be used in **switching power supplies (SMPS)** and **DC-DC converters**. As the main switching element, it ensures high efficiency and low power consumption, and is suitable for use in power solutions for various consumer electronics and industrial equipment.
2. **Battery Management Systems**
In battery management systems, this MOSFET can be used for **battery charging and discharging control**, which can effectively manage current flow and ensure the safe and efficient use of batteries. It is widely used in electric vehicles and renewable energy storage systems.
3. **LED Drivers**
This device is suitable for **LED lighting driver circuits** to achieve efficient current control and dimming functions to meet the high efficiency requirements of modern lighting systems.
4. **Industrial Automation**
NCEP3060EQ-VB can be used for **motor drive** and **PLC control**, providing high current handling capabilities to ensure stability and reliability in industrial automation equipment.
5. **Portable Devices**
In portable electronic products, the small size and high efficiency of NCEP3060EQ-VB make it an ideal choice for **power management and signal conditioning**, enhancing product performance and endurance.
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NCEP3060EQ-VB is an N-type MOSFET with excellent performance, suitable for a wide range of high-efficiency power management, battery management and LED lighting, meeting the requirements of modern electronic devices for high efficiency and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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