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NCE80T1K2-VB Product details

Product introduction:

1. NCE80T1K2-VB Product Introduction

NCE80T1K2-VB is a single N-channel power MOSFET in TO-220 package with high withstand voltage characteristics (V\(_{DS}\) up to 800V) and gate voltage tolerance of ±30V. This device adopts **Super-Junction (Super-Junction) and multi-layer epitaxial (Multi-EPI) technology** to achieve low on-resistance and low loss in high-voltage applications. This makes it an ideal choice for high-efficiency switching circuits, which can effectively improve system performance and energy saving.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 800V 3.5V 5A 1300mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 800V 3.5V 5A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 800V 3.5V 5A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
II. NCE80T1K2-VB Detailed parameter description

| Parameter | Value | Description|
|---------------------|--------------------------------|--------------------------------|
| **Package** | TO-220 | General package for high current and high voltage|
| **Configuration** | Single N-channel | Single N-channel MOSFET |
| **Drain-source voltage (V\(_{DS}\))** | 800V | Support high voltage application|
| **Gate-source voltage (V\(_{GS}\))** | ±30V | Gate voltage tolerance range|
| **Turning voltage (V\(_{th}\))** | 3.5V | Turn-on threshold of gate drive voltage|
| **On-resistance (R\(_{DS(on)}\))** | 1300mΩ @ V\(_{GS}\)=10V | On-state impedance affects efficiency and heat dissipation|
| **Drain current (I\(_{D}\))** | 5A | Maximum continuous current|
| **Technology** | SJ_Multi-EPI | Super junction and multi-layer epitaxial structure improve voltage and efficiency|
| **Operating temperature** | -55°C ~ 150°C | Suitable for application environments with a wide temperature range|

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Domain and module applications:

3. NCE80T1K2-VB Application Fields and Module Examples

1. **High-voltage Power Supply Module**
NCE80T1K2-VB is suitable for AC power supply and high-voltage DC power supply modules, such as power adapters, industrial power supplies and server power supplies. Its 800V withstand voltage characteristics ensure reliability in high-voltage environments and reduce energy loss through lower R\(_{DS(on)}\).

2. **LED Lighting Driver**
In high-power LED lighting systems, such as street lighting, tunnel lighting and industrial lighting, this MOSFET can stably handle the high voltage driven by the power supply, improve system efficiency and extend the life of lighting equipment.

3. **Motor Control System**
This model is suitable for motor drive applications that require high-voltage switching, such as electric vehicle control modules and industrial servo drives. Its 5A drain current and high-voltage withstand capability make it suitable for motor control scenarios that require high efficiency and reliable switching.

4. **Photovoltaic Inverter**
In photovoltaic power generation systems, the inverter needs to handle high voltage input and convert DC to AC. With its 800V withstand voltage characteristics and high-efficiency switching performance, the NCE80T1K2-VB is suitable for improving the conversion efficiency of the inverter and reducing heat dissipation.

5. **Power Conversion and UPS Systems**
This MOSFET is suitable for uninterruptible power supplies (UPS) and power conversion modules to ensure stable output during grid fluctuations or failures. The high voltage and high efficiency characteristics of the NCE80T1K2-VB make it an ideal choice for these applications.

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The high voltage characteristics and high efficiency of the NCE80T1K2-VB make it suitable for various industrial, lighting and power conversion applications, providing reliable performance and ensuring stable operation of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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