Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
800V |
|
3.5V |
5A |
|
|
1300mΩ |
SJ_Multi-EPI |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
800V |
|
3.5V |
5A |
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
800V |
|
3.5V |
5A |
|
SJ_Multi-EPI |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
II. NCE80R1K2-VB Detailed Parameters
| **Parameter** | **Value** | **Description** |
|-----------------------|--------------------------------|-----------------------------------------|
| **Package Type** | TO220 | Provides good heat dissipation performance|
| **Channel Type** | Single N-channel | Single-channel MOSFET, suitable for high voltage applications|
| **Drain-source voltage V\(_{DS}\)** | 800V | Withstands drain-source voltage up to 800V|
| **Gate-source voltage V\(_{GS}\)** | ±30V | Enhances anti-interference ability|
| **Threshold voltage V\(_{th}\)** | 3.5V | Minimum gate voltage required to turn on the MOSFET|
| **On-resistance R\(_{DS(on)}\)** | 1300mΩ @ V\(_{GS}\)=10V | Lower conduction loss|
| **Drain current I\(_D\)** | 5A | Maximum drain current that can be sustained|
| **Process technology** | SJ_Multi-EPI | Improved thermal stability and current carrying capacity|
---
Domain and module applications：
III. Application fields and module examples
1. **High-voltage power conversion**
NCE80R1K2-VB plays a key role in high-voltage power converters and is suitable for applications that require high efficiency and high voltage. Its excellent conduction performance and high voltage handling capability make it an ideal choice in DC-DC converter and switching power supply design, effectively reducing energy loss.
2. **Motor drive control**
In motor drive systems, this MOSFET can be used to control the start and operation of high-voltage motors. Due to its high voltage and moderate on-resistance, it can provide stable performance when the motor is working, suitable for motor control in industrial automation and robotic systems.
3. **Renewable energy inverter**
NCE80R1K2-VB is also widely used in solar and wind inverters. It can efficiently convert energy at high voltage, ensure the efficient use of renewable energy systems, and support the development of green energy.
4. **UPS (Uninterruptible Power Supply) System**
In UPS systems, this MOSFET can provide efficient power conversion to ensure that the equipment can continue to operate when the main power fails. Its high voltage capability and good thermal performance enable the system to maintain stable output in emergency situations.
5. **Electrical Equipment and Power Systems**
NCE80R1K2-VB can be used in various electrical equipment and power systems, such as inverters and power conditioning devices, and can effectively withstand high voltage and current to ensure the reliability and safety of the equipment.
In summary, NCE80R1K2-VB is an ideal MOSFET for high voltage and high efficiency applications. It can meet the high performance and stability requirements of modern electronic equipment and is widely used in multiple industries and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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