Product introduction:
1. NCE7580-VB Product Introduction
NCE7580-VB is a high-performance single-channel N-type MOSFET in a **TO-220 package**, designed for applications requiring high current and low on-resistance. Its drain-source voltage (VDS) can reach **80V**, and the gate voltage (VGS) is rated at ±20V, ensuring stability under a variety of voltage conditions. The on-resistance (RDS(ON)) of NCE7580-VB is **9mΩ @ VGS = 4.5V** and **7mΩ @ VGS = 10V** at different gate voltages, and it can withstand drain currents (ID) up to **100A**, making it suitable for a variety of high-power applications. This MOSFET uses **Trench technology**, which can significantly reduce switching losses and improve system efficiency, making it an ideal choice for power management and industrial control.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
80V |
|
3V |
100A |
|
|
7mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
80V |
|
3V |
100A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
80V |
|
3V |
100A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
II. NCE7580-VB Parameter Description
| **Parameter Name** | **Parameter Value** | **Description** |
|----------------------|--------------------------|------------------------------------------|
| **Package** | TO-220 | Suitable for applications with high power heat dissipation requirements|
| **Configuration** | Single-N channel (Single-N) | Suitable for power switching and power management|
| **Drain-Source Voltage (VDS)** | 80V | Suitable for medium and high voltage applications|
| **Gate-Source Voltage (VGS)** | ±20V | Provides sufficient control voltage range|
| **Turn-On Threshold Voltage (Vth)** | 3V | When the gate voltage exceeds this value, the MOSFET turns on|
| **On-Resistance (RDS(ON))** | 9mΩ @ VGS = 4.5V | Low on-resistance reduces power loss|
| | 7mΩ @ VGS = 10V | |
| **Drain Current (ID)** | 100A | Capable of handling high current loads|
| **Technology** | Trench | Improves switching efficiency and reduces heat loss|
| **Operating Temperature Range** | -55°C ~ +150°C | Maintains stable performance in extreme temperatures|
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Domain and module applications:
III. Applicable fields and application modules of NCE7580-VB
1. **Power management module**
NCE7580-VB is widely used in **AC-DC converter** and **DC-DC converter**, and is suitable for high-efficiency power management. Its low on-resistance minimizes energy loss during power conversion and improves overall system efficiency.
2. **Electric vehicle drive system**
This MOSFET can be used in the motor drive and energy management system of **electric vehicles**, providing reliable power switching functions in the starting, braking and speed control of the motor to ensure efficient and safe current transmission.
3. **Industrial automation and control**
NCE7580-VB performs well in **industrial control systems**, especially in applications requiring high-power switching, such as **motor control** and **servo drive**. Its high current carrying capacity enables it to meet the stringent requirements of various industrial equipment.
4. **High-power LED driver**
In addition, this MOSFET is suitable for **high-power LED lighting** applications. Its excellent switching performance and low on-resistance ensure high-efficiency lamp driving, extended service life and improved energy efficiency.
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The high current handling capability and low on-resistance of NCE7580-VB make it a preferred component in power management, electric vehicles, industrial control and high-power lighting. Combined with its **Trench technology**, it effectively improves system efficiency and stability, and is an important part of modern power electronics design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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