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NCE60H10A-VB Product details

Product introduction:

NCE60H10A-VB Product Introduction

NCE60H10A-VB is a high-performance single N-channel MOSFET in a TO220 package, designed for applications that require high power and high efficiency. The device has a maximum drain-source voltage (V_DS) of 60V and a gate-source voltage (V_GS) range of ±20V. Its threshold voltage (V_th) is 3V, which allows it to turn on at a lower gate voltage. The on-resistance (R_DS(ON)) of this MOSFET is 9mΩ at a V_GS of 4.5V, and drops to 3mΩ at a V_GS of 10V. The maximum drain current (I_D) can reach 210A, with extremely low power consumption and heat generation. This makes the NCE60H10A-VB an ideal choice for a variety of high-efficiency applications such as power management, electric systems, and switching circuits.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 60V 3V 210A 3mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 60V 3V 210A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 60V 3V 210A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
Detailed parameter description

- **Model**: NCE60H10A-VB
- **Package**: TO220
- **Configuration**: Single N-channel
- **Drain-source voltage (V_DS)**: 60V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 3V
- **On-resistance (R_DS(ON))**:
- 9mΩ (at V_GS = 4.5V)
- 3mΩ (at V_GS = 10V)
- **Maximum leakage current (I_D)**: 210A
- **Technology**: Trench
- **Operating temperature range**: -55°C to 150°C

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Domain and module applications:

Application fields and module examples

1. **High-efficiency power converter**
NCE60H10A-VB can be widely used in DC-DC converters as an efficient switching device to ensure fast and stable conversion of electric energy and improve overall system efficiency.

2. **Electric vehicle drive system**
In the motor drive system of electric vehicles, this MOSFET provides low conduction loss and supports high current transmission, effectively improving the performance and range of the electric system.

3. **Battery Management System (BMS)**
NCE60H10A-VB is suitable for battery management systems, which can perform efficient charge and discharge control to ensure battery safety and service life.

4. **Industrial equipment control**
In industrial automation and control systems, this device can be used as a power switch to ensure stable operation of equipment under high load conditions and improve system reliability.

5. **LED lighting driver**
This MOSFET can be used in LED lighting driver circuits to ensure stable current output, improve the brightness and energy efficiency of LED lamps, and is suitable for various lighting solutions.

With its excellent performance and adaptability, NCE60H10A-VB has shown strong competitiveness in various application fields, especially in power management and drive systems that require high current and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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