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NCE3025G-VB Product details

Product introduction:

NCE3025G-VB Product Introduction

NCE3025G-VB is a high-efficiency single N-channel MOSFET in DFN8 (5x6) package, designed for low voltage and high current applications. The device has a drain-source voltage (V_DS) of up to 30V, a gate-source voltage (V_GS) of ±20V, and a threshold voltage (V_th) of 1.7V. At V_GS of 4.5V, its on-resistance (R_DS(ON)) is 9mΩ, which drops to 7mΩ at V_GS of 10V. With a maximum drain current of 80A and Trench technology, NCE3025G-VB has excellent switching performance and thermal management characteristics, making it suitable for a variety of high-efficiency power conversion and control applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 30V 1.7V 80A 7mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-N 30V 1.7V 80A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-N 30V 1.7V 80A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N
Detailed parameter description

- **Model**: NCE3025G-VB
- **Package**: DFN8(5x6)
- **Configuration**: Single N-channel
- **Drain-source voltage (V_DS)**: 30V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(ON))**:
- 9mΩ (at V_GS = 4.5V)
- 7mΩ (at V_GS = 10V)
- **Maximum leakage current (I_D)**: 80A
- **Technology**: Trench

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Domain and module applications:

Application fields and module examples

1. **Portable electronic devices**
The NCE3025G-VB is suitable for portable electronic devices such as smartphones, tablets and wearable devices. Its compact DFN8 package and low on-resistance help extend battery life while ensuring high performance and stability of the device.

2. **Switching Power Supply (SMPS)**
In switching power supply design, this MOSFET can be used as an efficient switching element for applications such as LED driving and power adapters. The low on-resistance and fast switching characteristics of the NCE3025G-VB help improve conversion efficiency and reduce energy loss.

3. **Motor drive circuits**
The NCE3025G-VB can be widely used in motor drive circuits, especially in power tools and household appliances. It can withstand leakage currents up to 80A to ensure smooth operation and efficient control of the motor.

4. **Battery Management System (BMS)**
This MOSFET also has important applications in battery management systems, especially in electric vehicles and energy storage systems. NCE3025G-VB can effectively prevent over-current and over-voltage conditions to ensure the safety and reliability of the battery pack.

The high performance, compact package and versatility of NCE3025G-VB make it an ideal choice for a variety of low-voltage applications, and it is widely used in portable electronic devices, switching power supplies, motor drives and battery management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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