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NCE20P45Q-VB Product details

Product introduction:

The following is detailed product information of the **NCE20P45Q-VB** MOSFET, including product introduction, parameter description, and examples of application areas and modules.

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### 1. Product Introduction
**NCE20P45Q-VB** is a high-efficiency **single P-channel MOSFET**, using **DFN8(3X3)** package, with **-20V** drain-source voltage (VDS) and **-52A** high leakage current capability. The **threshold voltage (Vth)** of this device is **-1.2V**, which enables fast turn-on at a lower gate-source voltage. Using **Trench technology**, the on-resistance (RDS(ON)) is only **4mΩ** at **VGS = 10V**, making it perform well in power management and control applications. NCE20P45Q-VB is particularly suitable for a variety of low-voltage applications, providing excellent performance and reliability.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(3X3) Single-P -20V -1.2V -52A 4mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(3X3) Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(3X3) Single-P -20V -1.2V -52A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(3X3) Single-P -20V -1.2V -52A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(3X3) Single-P

### 2. Detailed parameter description
- **Model**: NCE20P45Q-VB
- **Package**: DFN8(3X3)
- **Configuration**: Single P-channel
- **VDS (drain-source voltage)**: -20V
- **VGS (gate-source voltage)**: ±12V
- **Vth (threshold voltage)**: -1.2V
- **RDS(ON) (on-resistance)**:
- 6mΩ @ VGS = 4.5V
- 4mΩ @ VGS = 10V
- **ID (maximum drain current)**: -52A
- **Technology**: Trench

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Domain and module applications:

III. Application fields and module examples
1. **Power management system**
NCE20P45Q-VB performs well in power management applications. As a load switch element, it can achieve efficient power switching and control, reduce power consumption and improve system efficiency.

2. **Power tools**
This MOSFET can be used in the power control circuit of power tools to ensure stable current output under various working conditions, while running with low heat to extend the service life of the tool.

3. **Battery management system**
NCE20P45Q-VB is suitable for battery management applications. As a charge and discharge control element, it ensures efficient and safe management of current during battery charging and discharging.

4. **LED drive circuit**
In LED drive applications, the device can control the LED brightness through PWM modulation, and use its fast response and low on-resistance characteristics to achieve high-efficiency lighting solutions.

5. **Automotive electronics**
NCE20P45Q-VB is also suitable for automotive electronics. As a switching element for controlling motors, relays or other loads, it can provide reliable performance and efficient energy management in the vehicle power system.

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**Summary**: NCE20P45Q-VB has significant advantages in a variety of high-performance power electronics applications with its **-20V** drain-source voltage, **-52A** high current capability and **4mΩ** low on-resistance. The DFN8 (3X3) package provides good heat dissipation for the device, ensuring its stable operation in various harsh environments. It is an indispensable component in modern power management and control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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