Product introduction：
Product Introduction
**N6912-VB** is a high-performance half-bridge N+N channel MOSFET in a **DFN8(5X6)-C** package, designed for applications requiring high efficiency and high current. Its drain-source voltage (VDS) is **30V**, the gate-source voltage (VGS) range is ±20V, and it has a threshold voltage (Vth) of **1.7V**. At VGS = 4.5V and 10V, the on-resistance (RDS(ON)) is **4mΩ** and **3.4mΩ**, respectively, and can support a drain current of up to **60A**. Based on **Trench technology**, the N6912-VB achieves lower switching losses and excellent thermal management characteristics, making it an ideal choice for power management, motor drive and other high-power applications.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6)-C |
Half-Bridge-N+N |
30V |
|
1.7V |
60A |
|
|
3.4mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6)-C |
Half-Bridge-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6)-C |
Half-Bridge-N+N |
30V |
|
1.7V |
60A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6)-C |
Half-Bridge-N+N |
30V |
|
1.7V |
60A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6)-C |
Half-Bridge-N+N |
|
|
|
|
|
|
|
Detailed parameter description
- **Model**: N6912-VB
- **Package type**: DFN8(5X6)-C
- **Configuration**: Half-bridge N+N channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- @ VGS = 4.5V: 4mΩ
- @ VGS = 10V: 3.4mΩ
- **Maximum drain current (ID)**: 60A
- **Technology**: Trench
- **Package features**: DFN8(5X6)-C package has good thermal performance and small size, suitable for high power applications.
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Domain and module applications：
Application fields and modules
**N6912-VB** is designed to play an important role in the following fields and modules:
1. **DC-DC converter**
N6912-VB is widely used in high-efficiency DC-DC converters. It can handle high current at low on-resistance and improve power conversion efficiency. It is suitable for power management of servers, network equipment and other electronic devices.
2. **Motor drive**
This MOSFET is particularly suitable for motor drive systems. It can effectively control the start and stop and speed regulation of the motor. It is widely used in power tools, household appliances and industrial automation equipment to provide reliable current control and fast response.
3. **Power module and inverter**
In power modules and inverters, N6912-VB can be used in inverter circuits to optimize current waveforms and improve energy conversion efficiency, especially in photovoltaic power generation and wind energy conversion systems.
4. **Automotive electronics**
N6912-VB has important applications in modern automotive electronic systems, such as electric power steering systems and on-board power management modules, and can provide stable current output and efficient power control.
5. **LED driver**
This MOSFET is suitable for LED driver power supplies and can work stably at high currents to ensure the efficiency and reliability of LED lighting systems. It is suitable for commercial and industrial lighting solutions.
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With its excellent conduction performance, low on-resistance and high current handling capability, N6912-VB provides reliable solutions for multiple industries and application scenarios, making it an ideal MOSFET device for high power requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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