Product introduction：
1. N6906-VB Product Introduction
N6906-VB is a **half-bridge configured N-channel power MOSFET**, using **DFN8(5x6)-C** package, designed for efficient power management and switch control applications. The device has a **30V drain-source voltage (VDS)** and a **gate-source voltage (VGS)** of ±20V, and its turn-on threshold voltage (**Vth**) is **1.7V**. At **VGS = 10V**, the on-resistance is as low as **3.4mΩ**, and it can carry **60A** of continuous drain current to ensure efficient current transmission. With **Trench process**, N6906-VB significantly reduces conduction losses and is suitable for applications with strict requirements on power efficiency and thermal management.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6)-C |
Half-Bridge-N+N |
30V |
|
1.7V |
60A |
|
|
3.4mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6)-C |
Half-Bridge-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6)-C |
Half-Bridge-N+N |
30V |
|
1.7V |
60A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6)-C |
Half-Bridge-N+N |
30V |
|
1.7V |
60A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6)-C |
Half-Bridge-N+N |
|
|
|
|
|
|
|
II. Detailed parameter description of N6906-VB
| **Parameter** | **Symbol** | **Value** | **Description** |
|-----------------------|-----------|-----------------------------|--------------------------------|
| **Drain-source voltage** | VDS | 30V | Maximum operating voltage|
| **Gate-source voltage** | VGS | ±20V | Gate voltage range|
| **Turn-on threshold voltage** | Vth | 1.7V | Voltage at which MOSFET starts to turn on|
| **On-resistance** | RDS(ON) | 3.4mΩ @ VGS = 10V | On-resistance when gate-source voltage is 10V|
| | RDS(ON) | 4mΩ @ VGS = 4.5V | On-resistance when gate-source voltage is 4.5V|
| **Maximum drain current** | ID | 60A | Maximum current in continuous conduction|
| **Pulsed drain current** | IDM | >60A (depends on pulse period) | Current limit in short time|
| **Operating junction temperature range** | Tj | -55°C ~ 150°C | Device operating temperature range|
| **Package type** | - | DFN8(5x6)-C | Compact surface mount package with improved heat dissipation|
| **Technology type** | - | Trench | Low loss trench process|
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Domain and module applications：
III. Application fields and module examples
1. **DC-DC converter**
N6906-VB is used as a switching device in **DC-DC converter** to effectively realize the conversion and regulation of electric energy. It is widely used in high-efficiency power modules and power management systems, which can improve the overall energy efficiency and stability.
2. **Motor drive system**
This device is very suitable for **brushless DC motor (BLDC)** drive modules. The fast switching characteristics and high current carrying capacity of N6906-VB enable it to provide excellent performance in motor drive and control applications.
3. **Battery management system (BMS)**
N6906-VB can be used for power switches in **battery management systems** to ensure safe charging and discharging of batteries, reduce switching losses, and extend battery life. This is crucial for battery management in electric vehicles and electric bicycles.
4. **Consumer electronics**
In **consumer electronics** (such as mobile phones and tablets), the compact package and low on-resistance of N6906-VB make it suitable for power management, helping to achieve efficient energy conversion and management.
5. **LED lighting driver**
N6906-VB is suitable for **LED lighting driver**. Its low on-resistance and high current capability ensure the stable performance of LED lamps at different brightness levels, and is widely used in indoor and outdoor lighting systems.
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N6906-VB is a powerful power MOSFET with a wide range of application potential, especially for high-efficiency power solutions, drive circuits, and consumer electronics. Its half-bridge structure provides designers with flexibility and high performance, ensuring the reliability and efficiency of the equipment under a variety of working conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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