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N6712-VB Product details

Product introduction:

1. N6712-VB Product Introduction

N6712-VB is a **single N-channel power MOSFET**, using **DFN8(5x6)** package, designed to provide efficient current management and switch control solutions. The device supports **30V drain-source voltage (VDS)** and **gate-source voltage (VGS)** of ±20V, and the turn-on threshold voltage (**Vth**) is only **1.7V**. Its on-resistance is very low, only **3mΩ** at **VGS = 10V**, and it can carry **120A** of continuous drain current, suitable for high current, high power applications. With **Trench process**, N6712-VB can achieve low conduction loss and fast switching performance, which is very suitable for scenarios with strict requirements on power efficiency and thermal management.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 30V 1.7V 120A 3mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-N 30V 1.7V 120A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-N 30V 1.7V 120A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N
II. Detailed parameter description of N6712-VB

| **Parameter** | **Symbol** | **Value** | **Description** |
|-----------------------|-----------|-----------------------------|--------------------------------|
| **Drain-source voltage** | VDS | 30V | Maximum operating voltage|
| **Gate-source voltage** | VGS | ±20V | Gate voltage range|
| **Turn-on threshold voltage** | Vth | 1.7V | Voltage at which MOSFET starts to turn on|
| **On-resistance** | RDS(ON) | 3mΩ @ VGS = 10V | On-resistance when gate-source voltage is 10V|
| | RDS(ON) | 5mΩ @ VGS = 4.5V | On-resistance when gate-source voltage is 4.5V|
| **Maximum drain current** | ID | 120A | Maximum current in continuous conduction|
| **Pulsed drain current** | IDM | >120A (depending on pulse period) | Current limit in short time|
| **Operating junction temperature range** | Tj | -55°C ~ 150°C | Device operating temperature range|
| **Package type** | - | DFN8(5x6) | Compact surface mount package with improved heat dissipation|
| **Technology type** | - | Trench | Low loss trench process|

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Domain and module applications:

III. Application fields and module examples

1. **High-efficiency DC-DC converter**
N6712-VB plays a key role in **DC-DC buck or boost converter**, greatly reducing energy loss and improving conversion efficiency with its ultra-low on-resistance. This makes it very suitable for devices with high power efficiency requirements such as laptops, tablets and servers.

2. **Motor drive system**
The device is suitable for **brushless DC motor (BLDC)** and stepper motor drive modules to ensure high efficiency and low heat generation under high load. Common application scenarios include electric scooters, power tools and industrial automation control systems.

3. **Battery management system (BMS)**
N6712-VB can effectively reduce switching losses in **battery pack charge and discharge management** to ensure efficient operation of the battery. This feature is very important in electric vehicles, electric bicycles and home energy storage systems to improve battery life and reliability.

4. **Load switch and protection circuit**
In **load switch module**, this MOSFET can realize fast switching operation, which is suitable for current protection circuits in smart phones and communication equipment, ensuring that the equipment quickly disconnects the current in overcurrent or short circuit conditions to avoid damage.

5. **Consumer electronics and LED lighting**
In **LED driver modules** and consumer electronics products, the low RDS(ON) characteristics of N6712-VB can effectively control heat, extend the service life of LEDs, and improve product energy efficiency. It is suitable for indoor and outdoor lighting systems and display panels.

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N6712-VB is a MOSFET product for the high-performance market. Its high current handling capability and low on-resistance make it an ideal choice for power management, battery protection, and motor control. The compact package and excellent thermal management capabilities of this MOSFET ensure reliable operation of the device under high load and high temperature environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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