Product introduction:
N6200-VB Product Introduction
The N6200-VB is a high-efficiency single N-channel MOSFET in a DFN8 (5x6mm) package, developed for applications that require high current and miniaturized design. Its maximum drain-source voltage (VDS) is 30V and its maximum gate-source voltage (VGS) is ±20V, making it suitable for medium-voltage power management and switching applications. The threshold voltage (Vth) of the N6200-VB is 1.7V, ensuring rapid turn-on at a lower gate drive voltage and improving switching efficiency. The on-resistance (RDS(ON)) of this MOSFET is extremely low, at 9mΩ at VGS=4.5V and 7mΩ at VGS=10V, significantly reducing power consumption and heat generation, making it very suitable for high-efficiency and high-performance electronic devices.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
80A |
|
|
7mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
80A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
80A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
| **Parameter** | **Description** |
|------------------------|---------------------------|
| **Model** | N6200-VB |
| **Package** | DFN8 (5x6mm) |
| **Configuration** | Single N-channel MOSFET |
| **Maximum drain-source voltage (VDS)** | 30V |
| **Maximum gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 1.7V |
| **On-resistance (RDS(ON))** | 9mΩ @ VGS=4.5V
7mΩ @ VGS=10V |
| **Maximum drain current (ID)** | 80A |
| **Technology** | Trench |
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Domain and module applications:
Applications and module examples
1. **Power management**
The N6200-VB is ideal for power management circuits such as DC-DC converters and switching power supplies. Its low on-resistance keeps power consumption low under high load conditions, improving overall energy efficiency. It is widely used in consumer electronics and computer power modules.
2. **Battery management system (BMS)**
In battery management systems, this MOSFET can be used as a charge and discharge control switch. It can carry up to 80A of drain current and is suitable for electric vehicles and energy storage systems to ensure safe and reliable battery operation.
3. **Motor drive**
The N6200-VB can be used for drive control of small DC motors. Its fast switching characteristics and high current carrying capacity can improve the response speed of the motor. It is suitable for power tools, toys and household appliances.
4. **LED drive circuit**
This MOSFET is suitable for LED drive circuits, providing stable current and reducing energy loss. Its high efficiency and compact package are very suitable for high-brightness lighting and dimming systems, ensuring long life and high efficiency of LEDs.
5. **Portable Electronic Devices**
N6200-VB is also widely used in portable electronic products, such as smart phones, tablets and mobile chargers. Its DFN8 package design not only saves space, but also provides excellent thermal performance and current carrying capacity, meeting the needs of modern devices for energy efficiency and miniaturization.
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With its excellent performance and high reliability, N6200-VB plays an important role in a variety of electronic applications and is an ideal choice for high-efficiency and miniaturized designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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