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N2500N-T2B-AT-VB Product details
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Product Introduction
The **N2500N-T2B-AT-VB** is a single N-channel MOSFET in a compact **SOT23-3** package suitable for miniaturized electronic devices. The device has a drain-source voltage (VDS) of up to **200V**, a maximum gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 2.5V. Although its on-resistance (RDS(ON)) is **1400mΩ** (at VGS = 10V), its design is optimized for low-current applications in high-voltage environments, with a maximum drain current (ID) of **0.6A**. Using **Trench technology**, the N2500N-T2B-AT-VB has excellent performance in high-voltage and low-power management applications. Its small package size makes it ideal for space-constrained applications.
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The **N2500N-T2B-AT-VB** is a single N-channel MOSFET in a compact **SOT23-3** package suitable for miniaturized electronic devices. The device has a drain-source voltage (VDS) of up to **200V**, a maximum gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 2.5V. Although its on-resistance (RDS(ON)) is **1400mΩ** (at VGS = 10V), its design is optimized for low-current applications in high-voltage environments, with a maximum drain current (ID) of **0.6A**. Using **Trench technology**, the N2500N-T2B-AT-VB has excellent performance in high-voltage and low-power management applications. Its small package size makes it ideal for space-constrained applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 200V | 2.5V | 0.6A | 1400mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 200V | 2.5V | 0.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 200V | 2.5V | 0.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N |
Detailed parameter description
- **Model**: N2500N-T2B-AT-VB
- **Package type**: SOT23-3
- **Configuration**: Single N channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- @ VGS = 10V: 1400mΩ
- **Maximum drain current (ID)**: 0.6A
- **Technology**: Trench
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- **Model**: N2500N-T2B-AT-VB
- **Package type**: SOT23-3
- **Configuration**: Single N channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- @ VGS = 10V: 1400mΩ
- **Maximum drain current (ID)**: 0.6A
- **Technology**: Trench
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Domain and module applications：
Application fields and modules
**N2500N-T2B-AT-VB** is suitable for the following fields and modules due to its high voltage characteristics and compact package:
1. **Power management of consumer electronic devices**:
In smartphones, tablets and other portable devices, N2500N-T2B-AT-VB can be used as a high-voltage switching device in charging modules or battery management systems to help optimize power consumption and battery life.
2. **Signal switch in industrial control systems**:
Because it supports drain-source voltages up to 200V, this MOSFET is suitable for low-current high-voltage signal switching in industrial control applications, such as sensor signal switching and protection circuits.
3. **Circuit protection module**:
In circuits that require isolation or short-circuit protection, N2500N-T2B-AT-VB can be used as a protection element to prevent circuit overload or current backflow.
4. **LED driver and small lighting system**:
This device is suitable for constant current driver or small lamp control module in LED lighting module, especially in high voltage and low current lighting system.
5. **Low power control in automotive electronics**:
In automotive electronic systems, N2500N-T2B-AT-VB can be used for high voltage switch applications in vehicle control modules, such as gate control modules or sensor interfaces.
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**N2500N-T2B-AT-VB**'s high voltage capability and miniaturized design make it very suitable for high voltage and low current applications in modern electronic systems, especially in space-limited and power-sensitive scenarios.
**N2500N-T2B-AT-VB** is suitable for the following fields and modules due to its high voltage characteristics and compact package:
1. **Power management of consumer electronic devices**:
In smartphones, tablets and other portable devices, N2500N-T2B-AT-VB can be used as a high-voltage switching device in charging modules or battery management systems to help optimize power consumption and battery life.
2. **Signal switch in industrial control systems**:
Because it supports drain-source voltages up to 200V, this MOSFET is suitable for low-current high-voltage signal switching in industrial control applications, such as sensor signal switching and protection circuits.
3. **Circuit protection module**:
In circuits that require isolation or short-circuit protection, N2500N-T2B-AT-VB can be used as a protection element to prevent circuit overload or current backflow.
4. **LED driver and small lighting system**:
This device is suitable for constant current driver or small lamp control module in LED lighting module, especially in high voltage and low current lighting system.
5. **Low power control in automotive electronics**:
In automotive electronic systems, N2500N-T2B-AT-VB can be used for high voltage switch applications in vehicle control modules, such as gate control modules or sensor interfaces.
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**N2500N-T2B-AT-VB**'s high voltage capability and miniaturized design make it very suitable for high voltage and low current applications in modern electronic systems, especially in space-limited and power-sensitive scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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