Product introduction：
1. N2500N-T1B-AT-VB Product Introduction
N2500N-T1B-AT-VB is a **single N-channel MOSFET**, which adopts a small **SOT23-3** package, suitable for space-constrained applications. Its **drain-source voltage (VDS)** is **200V**, which supports medium and high voltage working requirements, and the gate voltage (VGS) is rated at ±20V, with strong noise immunity and stability. The turn-on threshold voltage (Vth) of this MOSFET is 2.5V, which enables it to work normally under low voltage drive. At **VGS=10V**, its **on-resistance (RDS(on))** is **1400mΩ**, and it can carry **0.6A** of drain current. This MOSFET is manufactured based on the advanced trench process and has excellent switching performance and energy efficiency, making it ideal for applications such as signal control, low-power conversion, and protection circuits.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N |
200V |
20（±V） |
2.5V |
0.6A |
|
|
1400mΩ |
|
II. Detailed parameter description of N2500N-T1B-AT-VB
| **Parameter** | **Symbol** | **Value** | **Unit** | **Description** |
|---------------------|--------------|----------------------------|------------------|-----------------------------------|
| **Drain-Source voltage** | VDS | 200 | V | Maximum withstand voltage between drain and source|
| **Gate-Source voltage** | VGS | ±20 | V | Maximum rated voltage between gate and source|
| **Turn-on threshold voltage** | Vth | 2.5 | V | Gate voltage required for MOSFET to turn on|
| **On-resistance** | RDS(on) | 1400 (VGS=10V) | mΩ | Resistance value of drain-source path|
| **Continuous Drain Current** | ID | 0.6 | A | Maximum continuous drain current allowed|
| **Technology** | - | Trench process | - | Provides excellent switching performance and energy efficiency|
| **Package** | - | SOT23-3 | - | Small package, suitable for compact space applications|
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Domain and module applications：
III. Application fields and module examples
1. **Signal control and drive circuit**
N2500N-T1B-AT-VB performs well in the field of small current signal amplification and control, and is suitable for signal drive circuits such as relays and switches.
2. **Power protection and current detection circuit**
Due to its moderate on-resistance, this device is suitable for use in the overcurrent protection circuit of small power modules, and can quickly disconnect when the circuit is abnormal to protect the load and system.
3. **Smart home devices**
In smart home devices, such as sensor modules and low-power controllers, this MOSFET can provide stable current switching and driving functions.
4. **Portable device power management**
In portable devices, the small package size and efficient switching performance of this device make it an ideal choice for battery management modules, helping to improve energy efficiency and extend battery life.
5. **Lighting and LED Driver**
N2500N-T1B-AT-VB can be used in small driver circuits of LED lighting equipment to ensure efficient current control and extend the service life of lamps.
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With its high voltage tolerance, small package and excellent switching performance, N2500N-T1B-AT-VB is very suitable for use in small electronic devices, smart home modules and low-power circuits. It is an efficient, stable and flexible solution.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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