Product introduction：
1. MVBF170LT1G-VB Product Introduction
MVBF170LT1G-VB is a high-performance **single N-channel MOSFET**, packaged in **SOT23-3**, designed for low-voltage and low-power applications. The **drain-source voltage (VDS)** of the device is rated at **60V**, and it can still maintain stable operating performance at higher voltages. The **turn-on threshold voltage (Vth)** of MVBF170LT1G-VB is **1.7V**, which enables it to turn on quickly at a lower gate voltage and improve the switching response speed. The device has an **2800mΩ** on-resistance at **VGS=10V**. This low on-resistance design can effectively reduce energy loss and ensure high-efficiency operation. Its maximum drain current is **0.3A**, which is very suitable for low-power devices. Manufactured using Trench Technology, this MOSFET has excellent switching characteristics and is ideal for applications with limited space and low power requirements.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N |
60V |
20（±V） |
1.7V |
0.3A |
|
|
2800mΩ |
|
II. Detailed parameter description of MVBF170LT1G-VB
| **Parameter** | **Symbol** | **Value** | **Unit** | **Description** |
|---------------------|--------------|----------------------------|------------------|-----------------------------------|
| **Drain-Source voltage** | VDS | 60 | V | Maximum withstand voltage between drain and source|
| **Gate-Source voltage** | VGS | ±20 | V | Maximum rated voltage between gate and source|
| **Turn-on threshold voltage** | Vth | 1.7 | V | Gate voltage required for MOSFET to turn on|
| **On-resistance** | RDS(on) | 3100 (VGS=4.5V) | mΩ | Resistance value of drain-source path|
| | RDS(on) | 2800 (VGS=10V) | mΩ | Drain-source resistance|
| **Continuous drain current** | ID | 0.3 | A | Maximum continuous drain current allowed|
| **Technology** | - | Trench process (Trench) | - | Provides efficient switching performance and thermal management|
| **Package** | - | SOT23-3 | - | Suitable for space-constrained applications|
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Domain and module applications：
III. Application fields and module examples
1. **Mobile devices**
MVBF170LT1G-VB is suitable for power management and switching circuits in mobile devices such as smartphones and tablets. Its compact SOT23-3 package is very suitable for application scenarios with limited space.
2. **LED drive circuit**
This MOSFET is suitable for use in LED drive circuits, and can provide efficient current control to ensure the stability and reliability of LEDs under different working conditions.
3. **Power management module**
In DC-DC converters and other power management modules, MVBF170LT1G-VB can effectively realize voltage conversion and current control to meet the needs of low-power power supply.
4. **Home appliances**
This device is also widely used in small home appliances, such as power tools, microwave ovens and other equipment, and can effectively control the switching and regulation of power.
5. **Sensor Circuit**
In various sensor circuits, the MVBF170LT1G-VB can be used for signal amplification and switch control to support various automation and smart home applications.
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The high efficiency, low conduction loss and compact package design of the MVBF170LT1G-VB make it have a wide range of application potentials in various electronic products and power management systems. The characteristics of this MOSFET are very suitable for the needs of modern low-power devices, which can help designers optimize space utilization while improving efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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